JPS5411685A - Junction type field effect semiconductor device - Google Patents
Junction type field effect semiconductor deviceInfo
- Publication number
- JPS5411685A JPS5411685A JP7678677A JP7678677A JPS5411685A JP S5411685 A JPS5411685 A JP S5411685A JP 7678677 A JP7678677 A JP 7678677A JP 7678677 A JP7678677 A JP 7678677A JP S5411685 A JPS5411685 A JP S5411685A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- field effect
- type field
- junction type
- effect semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase the amplification factor and the mutual conductance and also to reduce the capacitance between the source to gate and the drain to gate, by forming the gate region deeper than the source region, and by inserting the insulation substance having smaller dielectric coefficient than the semiconductor at the center of the concave of the major plane of the active semiconductor layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7678677A JPS5411685A (en) | 1977-06-28 | 1977-06-28 | Junction type field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7678677A JPS5411685A (en) | 1977-06-28 | 1977-06-28 | Junction type field effect semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5411685A true JPS5411685A (en) | 1979-01-27 |
JPS5619113B2 JPS5619113B2 (en) | 1981-05-06 |
Family
ID=13615283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7678677A Granted JPS5411685A (en) | 1977-06-28 | 1977-06-28 | Junction type field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5411685A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06232419A (en) * | 1993-01-29 | 1994-08-19 | Shodenryoku Kosoku Tsushin Kenkyusho:Kk | Recessed gate type electrostatic induction transistor and its manufacture |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52147077A (en) * | 1976-06-02 | 1977-12-07 | Hitachi Ltd | Field-effect transisitor |
-
1977
- 1977-06-28 JP JP7678677A patent/JPS5411685A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52147077A (en) * | 1976-06-02 | 1977-12-07 | Hitachi Ltd | Field-effect transisitor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06232419A (en) * | 1993-01-29 | 1994-08-19 | Shodenryoku Kosoku Tsushin Kenkyusho:Kk | Recessed gate type electrostatic induction transistor and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS5619113B2 (en) | 1981-05-06 |
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