JPS5411685A - Junction type field effect semiconductor device - Google Patents

Junction type field effect semiconductor device

Info

Publication number
JPS5411685A
JPS5411685A JP7678677A JP7678677A JPS5411685A JP S5411685 A JPS5411685 A JP S5411685A JP 7678677 A JP7678677 A JP 7678677A JP 7678677 A JP7678677 A JP 7678677A JP S5411685 A JPS5411685 A JP S5411685A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
type field
junction type
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7678677A
Other languages
Japanese (ja)
Other versions
JPS5619113B2 (en
Inventor
Junichi Nishizawa
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Semiconductor Research Foundation
Original Assignee
Mitsubishi Electric Corp
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Semiconductor Research Foundation filed Critical Mitsubishi Electric Corp
Priority to JP7678677A priority Critical patent/JPS5411685A/en
Publication of JPS5411685A publication Critical patent/JPS5411685A/en
Publication of JPS5619113B2 publication Critical patent/JPS5619113B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase the amplification factor and the mutual conductance and also to reduce the capacitance between the source to gate and the drain to gate, by forming the gate region deeper than the source region, and by inserting the insulation substance having smaller dielectric coefficient than the semiconductor at the center of the concave of the major plane of the active semiconductor layer.
COPYRIGHT: (C)1979,JPO&Japio
JP7678677A 1977-06-28 1977-06-28 Junction type field effect semiconductor device Granted JPS5411685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7678677A JPS5411685A (en) 1977-06-28 1977-06-28 Junction type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7678677A JPS5411685A (en) 1977-06-28 1977-06-28 Junction type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5411685A true JPS5411685A (en) 1979-01-27
JPS5619113B2 JPS5619113B2 (en) 1981-05-06

Family

ID=13615283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7678677A Granted JPS5411685A (en) 1977-06-28 1977-06-28 Junction type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5411685A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232419A (en) * 1993-01-29 1994-08-19 Shodenryoku Kosoku Tsushin Kenkyusho:Kk Recessed gate type electrostatic induction transistor and its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147077A (en) * 1976-06-02 1977-12-07 Hitachi Ltd Field-effect transisitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147077A (en) * 1976-06-02 1977-12-07 Hitachi Ltd Field-effect transisitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232419A (en) * 1993-01-29 1994-08-19 Shodenryoku Kosoku Tsushin Kenkyusho:Kk Recessed gate type electrostatic induction transistor and its manufacture

Also Published As

Publication number Publication date
JPS5619113B2 (en) 1981-05-06

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