JPS548475A - Manufacture for semiconductor - Google Patents

Manufacture for semiconductor

Info

Publication number
JPS548475A
JPS548475A JP7414177A JP7414177A JPS548475A JP S548475 A JPS548475 A JP S548475A JP 7414177 A JP7414177 A JP 7414177A JP 7414177 A JP7414177 A JP 7414177A JP S548475 A JPS548475 A JP S548475A
Authority
JP
Japan
Prior art keywords
semiconductor
manufacture
source
forming
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7414177A
Other languages
Japanese (ja)
Other versions
JPS6231505B2 (en
Inventor
Junichi Mogi
Kiyoshi Miyasaka
Fumio Baba
Tomio Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7414177A priority Critical patent/JPS548475A/en
Publication of JPS548475A publication Critical patent/JPS548475A/en
Publication of JPS6231505B2 publication Critical patent/JPS6231505B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE: To increase the dielectric strength between the source and the drain of MOS element, by forming the source and drain region by diffusion after forming the mask layer to impurity diffusion around the active region, and by blocking the contactness of these regions to the channel stopper.
COPYRIGHT: (C)1979,JPO&Japio
JP7414177A 1977-06-22 1977-06-22 Manufacture for semiconductor Granted JPS548475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7414177A JPS548475A (en) 1977-06-22 1977-06-22 Manufacture for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7414177A JPS548475A (en) 1977-06-22 1977-06-22 Manufacture for semiconductor

Publications (2)

Publication Number Publication Date
JPS548475A true JPS548475A (en) 1979-01-22
JPS6231505B2 JPS6231505B2 (en) 1987-07-08

Family

ID=13538593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7414177A Granted JPS548475A (en) 1977-06-22 1977-06-22 Manufacture for semiconductor

Country Status (1)

Country Link
JP (1) JPS548475A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404579A (en) * 1980-10-28 1983-09-13 Inc. Motorola Semiconductor device having reduced capacitance and method of fabrication thereof
US4591890A (en) * 1982-12-20 1986-05-27 Motorola Inc. Radiation hard MOS devices and methods for the manufacture thereof
US4918510A (en) * 1988-10-31 1990-04-17 Motorola, Inc. Compact CMOS device structure
US5198378A (en) * 1988-10-31 1993-03-30 Texas Instruments Incorporated Process of fabricating elevated source/drain transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839177A (en) * 1971-09-22 1973-06-08
JPS50105278A (en) * 1974-01-24 1975-08-19

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4839177A (en) * 1971-09-22 1973-06-08
JPS50105278A (en) * 1974-01-24 1975-08-19

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404579A (en) * 1980-10-28 1983-09-13 Inc. Motorola Semiconductor device having reduced capacitance and method of fabrication thereof
US4591890A (en) * 1982-12-20 1986-05-27 Motorola Inc. Radiation hard MOS devices and methods for the manufacture thereof
US4918510A (en) * 1988-10-31 1990-04-17 Motorola, Inc. Compact CMOS device structure
US5198378A (en) * 1988-10-31 1993-03-30 Texas Instruments Incorporated Process of fabricating elevated source/drain transistor

Also Published As

Publication number Publication date
JPS6231505B2 (en) 1987-07-08

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