JPS548475A - Manufacture for semiconductor - Google Patents
Manufacture for semiconductorInfo
- Publication number
- JPS548475A JPS548475A JP7414177A JP7414177A JPS548475A JP S548475 A JPS548475 A JP S548475A JP 7414177 A JP7414177 A JP 7414177A JP 7414177 A JP7414177 A JP 7414177A JP S548475 A JPS548475 A JP S548475A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- manufacture
- source
- forming
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To increase the dielectric strength between the source and the drain of MOS element, by forming the source and drain region by diffusion after forming the mask layer to impurity diffusion around the active region, and by blocking the contactness of these regions to the channel stopper.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7414177A JPS548475A (en) | 1977-06-22 | 1977-06-22 | Manufacture for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7414177A JPS548475A (en) | 1977-06-22 | 1977-06-22 | Manufacture for semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS548475A true JPS548475A (en) | 1979-01-22 |
JPS6231505B2 JPS6231505B2 (en) | 1987-07-08 |
Family
ID=13538593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7414177A Granted JPS548475A (en) | 1977-06-22 | 1977-06-22 | Manufacture for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS548475A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404579A (en) * | 1980-10-28 | 1983-09-13 | Inc. Motorola | Semiconductor device having reduced capacitance and method of fabrication thereof |
US4591890A (en) * | 1982-12-20 | 1986-05-27 | Motorola Inc. | Radiation hard MOS devices and methods for the manufacture thereof |
US4918510A (en) * | 1988-10-31 | 1990-04-17 | Motorola, Inc. | Compact CMOS device structure |
US5198378A (en) * | 1988-10-31 | 1993-03-30 | Texas Instruments Incorporated | Process of fabricating elevated source/drain transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4839177A (en) * | 1971-09-22 | 1973-06-08 | ||
JPS50105278A (en) * | 1974-01-24 | 1975-08-19 |
-
1977
- 1977-06-22 JP JP7414177A patent/JPS548475A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4839177A (en) * | 1971-09-22 | 1973-06-08 | ||
JPS50105278A (en) * | 1974-01-24 | 1975-08-19 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404579A (en) * | 1980-10-28 | 1983-09-13 | Inc. Motorola | Semiconductor device having reduced capacitance and method of fabrication thereof |
US4591890A (en) * | 1982-12-20 | 1986-05-27 | Motorola Inc. | Radiation hard MOS devices and methods for the manufacture thereof |
US4918510A (en) * | 1988-10-31 | 1990-04-17 | Motorola, Inc. | Compact CMOS device structure |
US5198378A (en) * | 1988-10-31 | 1993-03-30 | Texas Instruments Incorporated | Process of fabricating elevated source/drain transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS6231505B2 (en) | 1987-07-08 |
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