JPS5345978A - Insulated-gate-protective semiconductor device - Google Patents

Insulated-gate-protective semiconductor device

Info

Publication number
JPS5345978A
JPS5345978A JP12032476A JP12032476A JPS5345978A JP S5345978 A JPS5345978 A JP S5345978A JP 12032476 A JP12032476 A JP 12032476A JP 12032476 A JP12032476 A JP 12032476A JP S5345978 A JPS5345978 A JP S5345978A
Authority
JP
Japan
Prior art keywords
gate
insulated
semiconductor device
protective semiconductor
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12032476A
Other languages
Japanese (ja)
Inventor
Isao Yoshida
Takeaki Okabe
Shikayuki Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12032476A priority Critical patent/JPS5345978A/en
Publication of JPS5345978A publication Critical patent/JPS5345978A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: This device is so constituted that the dielectric strength of two-way diode will be prescribed by the effect of the field plate provided around the junction, thereby manufacturing a gate protective device.
COPYRIGHT: (C)1978,JPO&Japio
JP12032476A 1976-10-08 1976-10-08 Insulated-gate-protective semiconductor device Pending JPS5345978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12032476A JPS5345978A (en) 1976-10-08 1976-10-08 Insulated-gate-protective semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12032476A JPS5345978A (en) 1976-10-08 1976-10-08 Insulated-gate-protective semiconductor device

Publications (1)

Publication Number Publication Date
JPS5345978A true JPS5345978A (en) 1978-04-25

Family

ID=14783423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12032476A Pending JPS5345978A (en) 1976-10-08 1976-10-08 Insulated-gate-protective semiconductor device

Country Status (1)

Country Link
JP (1) JPS5345978A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552271A (en) * 1978-10-11 1980-04-16 Nec Corp Insulated gate type field effect semiconductor
JPS5825264A (en) * 1981-08-07 1983-02-15 Hitachi Ltd Insulated gate type semiconductor device and manufacture thereof
JPS5947766A (en) * 1982-09-10 1984-03-17 Hitachi Ltd Insulated gate type semiconducor device and manufacture thereof
JPH02268460A (en) * 1989-04-10 1990-11-02 Matsushita Electric Ind Co Ltd Electrostatic breakdown preventing circuit
WO2003092078A1 (en) * 2002-04-25 2003-11-06 Sanken Electric Co., Ltd. Semiconductor element and manufacturing method thereof
CN107170820A (en) * 2017-03-29 2017-09-15 西安电子科技大学 Arc grid leak composite field plate current apertures heterojunction device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552271A (en) * 1978-10-11 1980-04-16 Nec Corp Insulated gate type field effect semiconductor
JPS5825264A (en) * 1981-08-07 1983-02-15 Hitachi Ltd Insulated gate type semiconductor device and manufacture thereof
JPH0427712B2 (en) * 1981-08-07 1992-05-12 Hitachi Ltd
JPS5947766A (en) * 1982-09-10 1984-03-17 Hitachi Ltd Insulated gate type semiconducor device and manufacture thereof
JPH02268460A (en) * 1989-04-10 1990-11-02 Matsushita Electric Ind Co Ltd Electrostatic breakdown preventing circuit
WO2003092078A1 (en) * 2002-04-25 2003-11-06 Sanken Electric Co., Ltd. Semiconductor element and manufacturing method thereof
US7071527B2 (en) 2002-04-25 2006-07-04 Sanken Electric Co., Ltd. Semiconductor element and manufacturing method thereof
CN107170820A (en) * 2017-03-29 2017-09-15 西安电子科技大学 Arc grid leak composite field plate current apertures heterojunction device
CN107170820B (en) * 2017-03-29 2020-04-14 西安电子科技大学 Current aperture heterojunction device of arc-shaped gate-drain composite field plate

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