JPS5345978A - Insulated-gate-protective semiconductor device - Google Patents
Insulated-gate-protective semiconductor deviceInfo
- Publication number
- JPS5345978A JPS5345978A JP12032476A JP12032476A JPS5345978A JP S5345978 A JPS5345978 A JP S5345978A JP 12032476 A JP12032476 A JP 12032476A JP 12032476 A JP12032476 A JP 12032476A JP S5345978 A JPS5345978 A JP S5345978A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- insulated
- semiconductor device
- protective semiconductor
- protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: This device is so constituted that the dielectric strength of two-way diode will be prescribed by the effect of the field plate provided around the junction, thereby manufacturing a gate protective device.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12032476A JPS5345978A (en) | 1976-10-08 | 1976-10-08 | Insulated-gate-protective semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12032476A JPS5345978A (en) | 1976-10-08 | 1976-10-08 | Insulated-gate-protective semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5345978A true JPS5345978A (en) | 1978-04-25 |
Family
ID=14783423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12032476A Pending JPS5345978A (en) | 1976-10-08 | 1976-10-08 | Insulated-gate-protective semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5345978A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5552271A (en) * | 1978-10-11 | 1980-04-16 | Nec Corp | Insulated gate type field effect semiconductor |
JPS5825264A (en) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | Insulated gate type semiconductor device and manufacture thereof |
JPS5947766A (en) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | Insulated gate type semiconducor device and manufacture thereof |
JPH02268460A (en) * | 1989-04-10 | 1990-11-02 | Matsushita Electric Ind Co Ltd | Electrostatic breakdown preventing circuit |
WO2003092078A1 (en) * | 2002-04-25 | 2003-11-06 | Sanken Electric Co., Ltd. | Semiconductor element and manufacturing method thereof |
CN107170820A (en) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | Arc grid leak composite field plate current apertures heterojunction device |
-
1976
- 1976-10-08 JP JP12032476A patent/JPS5345978A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5552271A (en) * | 1978-10-11 | 1980-04-16 | Nec Corp | Insulated gate type field effect semiconductor |
JPS5825264A (en) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | Insulated gate type semiconductor device and manufacture thereof |
JPH0427712B2 (en) * | 1981-08-07 | 1992-05-12 | Hitachi Ltd | |
JPS5947766A (en) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | Insulated gate type semiconducor device and manufacture thereof |
JPH02268460A (en) * | 1989-04-10 | 1990-11-02 | Matsushita Electric Ind Co Ltd | Electrostatic breakdown preventing circuit |
WO2003092078A1 (en) * | 2002-04-25 | 2003-11-06 | Sanken Electric Co., Ltd. | Semiconductor element and manufacturing method thereof |
US7071527B2 (en) | 2002-04-25 | 2006-07-04 | Sanken Electric Co., Ltd. | Semiconductor element and manufacturing method thereof |
CN107170820A (en) * | 2017-03-29 | 2017-09-15 | 西安电子科技大学 | Arc grid leak composite field plate current apertures heterojunction device |
CN107170820B (en) * | 2017-03-29 | 2020-04-14 | 西安电子科技大学 | Current aperture heterojunction device of arc-shaped gate-drain composite field plate |
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