JPH02268460A - Electrostatic breakdown preventing circuit - Google Patents

Electrostatic breakdown preventing circuit

Info

Publication number
JPH02268460A
JPH02268460A JP9011589A JP9011589A JPH02268460A JP H02268460 A JPH02268460 A JP H02268460A JP 9011589 A JP9011589 A JP 9011589A JP 9011589 A JP9011589 A JP 9011589A JP H02268460 A JPH02268460 A JP H02268460A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
diode
voltage
inner circuit
threshold
inner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9011589A
Inventor
Yutaka Minamino
Yoshiya Takeda
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To prevent electrostatic breakdown by connecting two diodes in a specified direction between an outer input terminal and an inner circuit of an IC device and by realizing specified relationship between a driving voltage range of the IC and a threshold voltage of the diode.
CONSTITUTION: Diodes D13 and D22 are connected to an outer connecting terminal 4 of a gate electrode busbar of an inner circuit 1 which consists of an aSi thin film transistor array formed on a glass substrate. The other ends 5, 6 of the diode are connected to a source electrode busbar. A threshold voltage of the diode is made Vt1, and Vt2; and -Vt2<Vd<Vt1 is selected as a range of a driving voltage Vd of the inner circuit. According to this constitution, when a voltage not less than the inner driving voltage Vd is applied to an external terminal 4, a current flows through the diode and a high surge voltage is not applied to the inner circuit 1. When a voltage is not exceeding the threshold of the diode, it is transmitted to the inner circuit. A diode can be realized by n+aSi/iaSi/SiNx and composition of SiNx can control a threshold by film thickness.
COPYRIGHT: (C)1990,JPO&Japio
JP9011589A 1989-04-10 1989-04-10 Electrostatic breakdown preventing circuit Granted JPH02268460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9011589A JPH02268460A (en) 1989-04-10 1989-04-10 Electrostatic breakdown preventing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9011589A JPH02268460A (en) 1989-04-10 1989-04-10 Electrostatic breakdown preventing circuit

Publications (1)

Publication Number Publication Date
JPH02268460A true true JPH02268460A (en) 1990-11-02

Family

ID=13989517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9011589A Granted JPH02268460A (en) 1989-04-10 1989-04-10 Electrostatic breakdown preventing circuit

Country Status (1)

Country Link
JP (1) JPH02268460A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006262104A (en) * 2005-03-17 2006-09-28 Yamaha Corp D level amplifier
JP2010129893A (en) * 2008-11-28 2010-06-10 Sony Corp Semiconductor integrated circuit
US9887188B2 (en) 2015-01-20 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Electro-static discharge structure, circuit including the same and method of using the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140774A (en) * 1974-10-03 1976-04-05 Fujitsu Ltd
JPS5338269A (en) * 1976-09-20 1978-04-08 Nippon Precision Circuits Input*output protecting circuit of mos ic
JPS5345978A (en) * 1976-10-08 1978-04-25 Hitachi Ltd Insulated-gate-protective semiconductor device
JPS5376678A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device
JPS5950559A (en) * 1982-09-16 1984-03-23 Hitachi Ltd Protection circuit for semiconductor device
JPS6034051A (en) * 1983-08-05 1985-02-21 Nec Corp Semiconductor integrated circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140774A (en) * 1974-10-03 1976-04-05 Fujitsu Ltd
JPS5338269A (en) * 1976-09-20 1978-04-08 Nippon Precision Circuits Input*output protecting circuit of mos ic
JPS5345978A (en) * 1976-10-08 1978-04-25 Hitachi Ltd Insulated-gate-protective semiconductor device
JPS5376678A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device
JPS5950559A (en) * 1982-09-16 1984-03-23 Hitachi Ltd Protection circuit for semiconductor device
JPS6034051A (en) * 1983-08-05 1985-02-21 Nec Corp Semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006262104A (en) * 2005-03-17 2006-09-28 Yamaha Corp D level amplifier
JP2010129893A (en) * 2008-11-28 2010-06-10 Sony Corp Semiconductor integrated circuit
US8093623B2 (en) 2008-11-28 2012-01-10 Sony Corporation Semiconductor integrated circuit
US9887188B2 (en) 2015-01-20 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Electro-static discharge structure, circuit including the same and method of using the same

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