JPS5271987A - Semiconductor substrate provided with beam lead type semiconductor dev ices - Google Patents

Semiconductor substrate provided with beam lead type semiconductor dev ices

Info

Publication number
JPS5271987A
JPS5271987A JP14797475A JP14797475A JPS5271987A JP S5271987 A JPS5271987 A JP S5271987A JP 14797475 A JP14797475 A JP 14797475A JP 14797475 A JP14797475 A JP 14797475A JP S5271987 A JPS5271987 A JP S5271987A
Authority
JP
Japan
Prior art keywords
substrate provided
beam lead
lead type
semiconductor substrate
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14797475A
Other languages
Japanese (ja)
Other versions
JPS542545B2 (en
Inventor
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14797475A priority Critical patent/JPS5271987A/en
Publication of JPS5271987A publication Critical patent/JPS5271987A/en
Publication of JPS542545B2 publication Critical patent/JPS542545B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To release wiring density within the main device by extending beam leads to isolating regions between beam lead devices and composing check elements.
COPYRIGHT: (C)1977,JPO&Japio
JP14797475A 1975-12-11 1975-12-11 Semiconductor substrate provided with beam lead type semiconductor dev ices Granted JPS5271987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14797475A JPS5271987A (en) 1975-12-11 1975-12-11 Semiconductor substrate provided with beam lead type semiconductor dev ices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14797475A JPS5271987A (en) 1975-12-11 1975-12-11 Semiconductor substrate provided with beam lead type semiconductor dev ices

Publications (2)

Publication Number Publication Date
JPS5271987A true JPS5271987A (en) 1977-06-15
JPS542545B2 JPS542545B2 (en) 1979-02-08

Family

ID=15442299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14797475A Granted JPS5271987A (en) 1975-12-11 1975-12-11 Semiconductor substrate provided with beam lead type semiconductor dev ices

Country Status (1)

Country Link
JP (1) JPS5271987A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55175243U (en) * 1979-06-01 1980-12-16

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849872A (en) * 1972-10-24 1974-11-26 Ibm Contacting integrated circuit chip terminal through the wafer kerf

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55175243U (en) * 1979-06-01 1980-12-16

Also Published As

Publication number Publication date
JPS542545B2 (en) 1979-02-08

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