JPS54137287A - Reverse conducting thyristor - Google Patents

Reverse conducting thyristor

Info

Publication number
JPS54137287A
JPS54137287A JP4423578A JP4423578A JPS54137287A JP S54137287 A JPS54137287 A JP S54137287A JP 4423578 A JP4423578 A JP 4423578A JP 4423578 A JP4423578 A JP 4423578A JP S54137287 A JPS54137287 A JP S54137287A
Authority
JP
Japan
Prior art keywords
layer
region
adjacent
thyristor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4423578A
Other languages
Japanese (ja)
Inventor
Hiroshi Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4423578A priority Critical patent/JPS54137287A/en
Publication of JPS54137287A publication Critical patent/JPS54137287A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase the commutation di/dt limit amount when forming the thyristor and the diode into one body by setting the impurity density slope near the PN junction of the diode region larger than that near the central junction of the thyristor region. CONSTITUTION:Thyristor region 13 and diode region 14 are formed between a pair of main surface 11 and 12 of semiconductor substrate 1 with a space secured by separation region 15. Region 13 comprises P emitter layer PE adjacent to the limited area of main surface 11, part of N base layer NB adjacent to the rest area of surface 11 and layer PE, part of P base layer PB adjacent to NB layer and main surface 12, and N emitter layer NE adjacent to surface 12 buried within layer PB each. While region 14 consists of the part where layer NB is adjacent to surface 11 and the area distant away from region 13 among the areas where layer PB is adjacent to surface 12. In such constitution, the density of the layer PB of region 14 is set higher than the layer PB of region 13 as shown by P<+>.
JP4423578A 1978-04-17 1978-04-17 Reverse conducting thyristor Pending JPS54137287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4423578A JPS54137287A (en) 1978-04-17 1978-04-17 Reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4423578A JPS54137287A (en) 1978-04-17 1978-04-17 Reverse conducting thyristor

Publications (1)

Publication Number Publication Date
JPS54137287A true JPS54137287A (en) 1979-10-24

Family

ID=12685861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4423578A Pending JPS54137287A (en) 1978-04-17 1978-04-17 Reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS54137287A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848964A (en) * 1981-09-18 1983-03-23 Toyo Electric Mfg Co Ltd Forming method for junction of reverse conducting thyristor
JPS5852873A (en) * 1981-09-25 1983-03-29 Toyo Electric Mfg Co Ltd Forming method for junction of reverse conducting thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848964A (en) * 1981-09-18 1983-03-23 Toyo Electric Mfg Co Ltd Forming method for junction of reverse conducting thyristor
JPS5852873A (en) * 1981-09-25 1983-03-29 Toyo Electric Mfg Co Ltd Forming method for junction of reverse conducting thyristor

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