JPH03209774A - Semiconductor element - Google Patents

Abstract

PURPOSE:To realize high density integration of a semiconductor element by a method wherein, by making majority carrier flow from a semiconductor substrate side to an impurity introducing semiconductor region side, or in inverse direction, the impurity introducing semiconductor region in a semiconductor element obtaining a desired function is formed on the semiconductor substrate, and not formed in the semiconductor substrate. CONSTITUTION:An impurity introducting semiconductor region 43 composed of an N or N<+> (or P or P<+>) type polycrystalline or amorphous semiconductor layer is formed on the main surface 42 of a P (or N) type semiconductor substrate 41. An ohmic electrode 44 is formed on the region 43, and the impurity introducing region is not formed in the semiconductor substrate 41. In the semiconductor element having the above constitution, minority carrier can be injected from the impurity introducing semiconductor region 43 side to the semiconductor substrate 41 side, or in the inverse direction.

Description

Detailed Description of the Invention The present invention has a semiconductor substrate and an impurity-introduced semiconductor region into which impurities are introduced, and by injecting minority carriers from the impurity-introduced semiconductor region into the semiconductor substrate side or vice versa. The desired function can be achieved by flowing majority carriers from the semiconductor substrate side to the impurity-doped semiconductor region side or vice versa, or by extending or shrinking the depletion layer extending from the impurity-doped semiconductor region side to the semiconductor substrate side. A semiconductor device, which has a semiconductor substrate and a Schottky electrode, and by R-jing majority carriers from the Schottky electrode to the semiconductor substrate side or vice versa, or by extending or forming a depletion layer extending from the Schottky electrode side to the semiconductor substrate side. The present invention relates to a semiconductor device whose desired function can be obtained by shrinking it.

Conventionally, a semiconductor substrate has a semiconductor substrate and an impurity-implanted conductor region,
As shown in FIG. ) type semiconductor substrate 1, N to N
+ (or P to P") type impurity-introduced semiconductor region 4 region 2 is formed by introducing N (or P) type impurity, and an electrode 3 is ohmically attached on the impurity-introduced semiconductor region 2. It is normal to have

The semiconductor element shown in FIG. 1 and having such a configuration is
A bipolar transistor in which the semiconductor substrate 1 is used as a collector electrode, the impurity-doped semiconductor region 2 is used as a base region, and the electrode 3 is used as a base electrode, or the semiconductor substrate 1 is used as a base region,
This can be seen in a bipolar transistor in which impurity introduced region 2 is used as an emitter region and electrode 3 is used as an emitter electrode.

By the way, in the case of such a semiconductor element, since the impurity-introduced semiconductor region 2 is formed by introducing impurities into the semiconductor substrate 1, it is necessary to introduce impurities in this way, and it is easy to do so. Furthermore, since the impurity-introduced semiconductor region 2 is formed to extend within the semiconductor substrate 1, it is difficult to integrate and form semiconductor elements with high density.

Furthermore, conventionally, in a semiconductor element that has a semiconductor substrate and an impurity-doped conductor region, desired characteristics can be obtained by flowing majority carriers from the semiconductor substrate side to the impurity-doped semiconductor region side or vice versa. As shown in FIG. 2, a P◆ (or N'') type impurity-introduced semiconductor region 12 is formed in a P (or N) type semiconductor substrate 11 by introducing P (or N) type impurities. It is common to have a configuration in which an electrode 13 is ohmically attached to each impurity-introduced semiconductor region 12.

The semiconductor element shown in FIG. 2 and having such a configuration is
A bipolar transistor in which the semiconductor substrate 11 is the collector region, the impurity-doped semiconductor region 12 is the collector electrode region, and the electrode 13 is the collector electrode, or the semiconductor substrate 11 is the base region, the impurity-doped semiconductor region 12 is the base electrode region, and the electrode 13 This can be seen in a bipolar transistor in which the semiconductor substrate 11 is the emitter region, the impurity-introduced region 12 is the emitter electrode region, and the electrode 13 is the base electrode.

In the case of such a semiconductor element, as in the case of the semiconductor element shown in FIG. 1, the impurity-introduced semiconductor region 12 is formed by introducing impurities into the semiconductor substrate 11. What do you do with the same drawbacks?

Furthermore, conventionally, a semiconductor substrate and an impurity-doped semiconductor region are provided, and the desired function can be obtained by extending or shortening the depletion layer that spreads from the impurity-doped semiconductor region side to the semiconductor substrate side! I! In conductor elements,
As shown in FIG. 3, a P (or N) type semiconductor substrate 2
1, an N to N'' (or P7'7\P'') type impurity doped conductor region 22 is formed by introducing an N (or P) type impurity, and an electrode is formed in the semiconductor region 22 containing the impurity. 23 is generally configured to be ohmic.

The semiconductor element shown in FIG. 3 and having such a configuration is
The semiconductor substrate 21 is used as a chip tunnel region, the impurity-introduced semiconductor region 22 is used as a gate, and the electrode 23 is used as a gate electrode, and PN to P between the semiconductor substrate 21 and the impurity-introduced semiconductor region 22 are used.
From the N'' (or NP to NP'') junction 24, a depletion layer 25 can be extended into or shortened from the semiconductor substrate 21, as seen in junction field effect transistors.

In the case of such a semiconductor element, as in the case of the semiconductor element described above in FIGS. 1 and 2, the impurity-introduced semiconductor region 22 is formed by introducing impurities into the semiconductor substrate 21, so It has the same drawbacks as the cases of FIGS. 1 and 2.

Therefore, the present invention aims to propose a novel semiconductor device free from the above-mentioned drawbacks.As will become clear from the description below, one semiconductor device according to the present invention is composed of a semiconductor substrate and an impurity. When applied to a semiconductor device that has a hijin semiconductor region and a desired function can be obtained by injecting a small number of chyrelia from the impurity-introduced semiconductor region side to the semiconductor substrate side or vice versa, as shown in FIG. As shown, an impurity-doped semiconductor region 43 made of an N to N+ (or P to P+) type depleted or amorphous semiconductor layer is formed on the main surface 42 of the P (or N) type semiconductor substrate 41. , A, the electrode 44 is ohmically attached to the impurity-doped semiconductor region 43, and no impurity-doped semiconductor region is formed in the semiconductor substrate 41.

In the semiconductor device according to the present invention having such a configuration, a small number of semiconductors can be transferred from the impurity semiconductor region 43 side to the semiconductor substrate 41 side, or vice versa. It is clear that the semiconductor device can be implanted with a similar function as the conventional semiconductor device described above in FIG. 1.

However, according to the semiconductor device according to the present invention shown in FIG. 4, from the impurity-doped semiconductor region side to the semiconductor u-plate side,
Or conversely, the IlN ability to inject minority carriers is
Since an impurity-doped semiconductor region can be obtained without forming an impurity-doped semiconductor region on the semiconductor substrate side by introducing impurities, it does not have the drawbacks of the conventional semiconductor device described above with reference to FIG.

In addition, in the case of the semiconductor device according to the present invention shown in FIG. 4, the impurity-introduced semiconductor region 43 is
If the rm6 amorphous silicon layer is 0'atom/cm'' or more, the impurity-doped semiconductor region 43 will have a higher (about 0,150 V) energy Y band gap (1 , about 25 eV), the injection efficiency of minority carriers injected from the impurity layer 4' conductor region 43 side to the semiconductor substrate 41 side, or vice versa, will be reduced when the impurity-introduced semiconductor region 43 is covered with single crystal silicon. can be improved compared to

Further, the semiconductor element according to the present invention has a semiconductor substrate and an impurity-doped semiconductor region, and has an impurity-doped semiconductor f! from the semiconductor substrate side. Many on the 4th area side or vice versa = I
: When applied to a semiconductor device in which the desired function can be obtained by flowing ty clear, as shown in FIG. The semiconductor substrate 51 has an impurity-doped semiconductor region formed in the semiconductor substrate 51 by introducing an X-purity. do not have.

In this case, the Schottky electrode 53 is made of semimetallic amorphous semiconductor, and if the semiconductor substrate 51 is made of silicon and is of P type, it may be made of semimetallic amorphous silicon without a band gap. .

Note that the Schottky electrode 53 made of semimetallic amorphous silicon that does not have such a band gap is made of silane (
SiH4) gas, diborane (82Hl) gas,
Germanium (GeH4) gas is flowed as a raw material gas into the reactor in which the semiconductor substrate 51 is placed, on helium as a carrier, and the inside of the reactor is heated to a temperature of about 500°C. C that thermally decomposes gas
It can be formed by a process including a VD method. However, in this case, the flow rate of silane gas and diborane gas is set to 5×10″ or more.

In addition, by such a method, the Schottky electrode 5 made of semimetallic amorphous silicon having no band gap is formed.
3, the desired R1 height (φ (eV)).

It is clear that the semiconductor device according to the present invention having the configuration shown in FIG. 5 can allow a large number of Kirlia to flow from the semiconductor substrate 51 side to the Schottky electron NA 33 side or vice versa.

In this case, since the impurity-introduced semiconductor region formed by introducing impurities into the semiconductor substrate 51 is not removed, the same drawbacks as the conventional semiconductor element described above in FIG. 2 do not occur.

Furthermore, the semiconductor element according to the present invention has a semiconductor substrate and an impurity-doped semiconductor region, and can achieve desired results by flowing majority carriers from the semiconductor substrate side to the impurity-doped semiconductor region side or vice versa. When applied to a semiconductor device in which a function is implemented, as shown in FIG. An impurity-doped semiconductor region 63 made of a semiconductor layer is formed, an electrode 64 is ohmically attached to the impurity-doped semiconductor region 63, and the impurity-doped semiconductor region is formed in the semiconductor substrate 61. do not have.

The semiconductor device according to the present invention having such a configuration can provide the same engine as the conventional semiconductor device described above in FIG.

However, since such a function is obtained without forming an impurity-doped semiconductor region in the semiconductor substrate by introducing impurities, it does not have the drawbacks of the conventional semiconductor device described above in FIG. 2.

Furthermore, when the semiconductor element according to the present invention is applied to a conductor element, the desired function cannot be obtained by extending or contracting the depletion layer that spreads from the impurity-introduced semiconductor region side to the conductor substrate side. As shown in FIG. 8, the impurity-introduced semiconductor region has a structure in which a shot 4 electrode 73 is formed on one surface 72 of a P (or N) type semiconductor substrate 71, and the semiconductor No impurity-doped semiconductor region is formed in the substrate 71.

In this case, the switch electrode 73 may be made of metal, or may be made of neriglass mainly composed of SnO+ and InO+, or made of amorphous s+-[3 alloy, or amorphous s+-[3]. It may be made of a 3-Ge alloy.

It is clear that the cliff conductor according to the present invention having such a configuration can extend the depletion JI 75 from the Schottky junction 74 between the Schottky electrode 73 and the semiconductor substrate 71 to the semiconductor substrate 7111, and can also shorten it. be.

In this case, since no impurity-doped semiconductor region is formed in the semiconductor substrate 71, there is no drawback described above in FIG. 3.

Next, a semiconductor device to which the semiconductor device according to the present invention is applied and which can obtain a bipolar transistor function will be described.

FIG. 9 shows an example of a semiconductor device to which a semiconductor device according to the present invention is applied, which can obtain a bipolar transistor function, and has the configuration described below.

That is, an impurity-doped semiconductor region 83 made of an N+ type polycrystalline or amorphous semiconductor is formed in an island shape on the main surface 82 of an N type semiconductor substrate 81, for example.

On the other hand, a metal electrode 8 is placed on the polycrystalline or amorphous semiconductor layer 81.
4 is attached to Ohmic.

Further, a Schottky electrode 85 is provided on the main surface 81 of the semiconductor substrate 1 so as to surround the polycrystalline or amorphous semiconductor region 83 so as to form a Schottky junction 87 with the semiconductor substrate 1 . There is.

The above is an example of the configuration of a semiconductor element to which the semiconductor element according to the present invention is applied and which can obtain a bipolar transistor function.

According to such a configuration, the polycrystalline to amorphous semiconductor shown in the lower part of FIG. It is possible to have a configuration in which the depletion [186] extends to the region.

With this configuration, the depletion layer 86 extending within the semiconductor substrate 81 is a polycrystalline or A-quality semiconductor! P3
Is the region under 83 equivalently P type? It acts as a 1-teta η-body region.

For this reason, the semiconductor substrate 81 is used as the collector region and the severe
It functions as a bipolar I transistor with the t-4 electrode 85 as the base electrode and the polycrystalline or amorphous semiconductor layer 83 as the emitter IIIJlt.

Next, an example will be described in which the semiconductor device according to the present invention is applied to a semiconductor device that can obtain a function equivalent to that of a junction field effect transistor.

FIG. 10 shows an example of a semiconductor device to which the semiconductor device according to the present invention is applied, which can obtain an FR performance equivalent to that of a junction field effect transistor, and has the configuration described below.

In FIG. 10, parts corresponding to those in FIG. 9 are designated by the same reference numerals, and redundant explanations will be omitted.

The semiconductor device according to the present invention shown in FIG. 10 is applied,
A semiconductor element that can obtain Il performance equivalent to that of a junction field effect transistor has an apparently similar structure to that shown in FIG. It has a configuration that does not extend over the entire area.

The above is the configuration of a semiconductor device to which the semiconductor device according to the present invention is applied, which provides functionality equivalent to a junction field effect transistor.

According to a semiconductor device having such a configuration, the semiconductor substrate 81 is a drain region, the switch is a junction field effect transistor in which the pole 85 is a gate electrode, and the polycrystalline or amorphous semiconductor layer 83 is a source region. Equivalent functionality is obtained.

In the above, two examples of the semiconductor device according to the present invention have been described. For example, as a semiconductor substrate, as shown in FIG. 11, a polycrystalline to amorphous semiconductor (for example, silicon) A polycrystalline to amorphous conductor A is formed in a substrate 91 made of polycrystalline or amorphous material through an insulating layer 92 made of an oxide film.
t1a93 is formed, and the polycrystalline or amorphous semiconductor region 93 is used as the above-mentioned semiconductor substrate, and the above-mentioned function is 1q.
In addition, various modifications and changes may be made without departing from the spirit of the present invention.

[Brief explanation of drawings]

1 to 3 are linear cross-sectional views that do not show the main parts of a conventional semiconductor device. FIG. 4 is a cross-sectional view showing essential parts of an example of a semiconductor device according to the present invention. FIG. 5 is a cross-sectional view showing essential parts of another example of the semiconductor device according to the present invention. FIG. 6 is a diagram for explaining the Schottky electrode of the semiconductor device according to the present invention shown in FIG. 5. 7 and 8 are line sectional views showing essential parts of still another example of the semiconductor device according to the present invention. 9 and 10 are line sectional views showing specific examples of semiconductor devices according to the present invention, respectively. FIG. 11 is a cross-sectional view along line 1' of a semiconductor substrate that can be used in a semiconductor device according to the present invention. 41.51.61.71...Semiconductor substrate 43.63.
・・・・・・・・・・・・・・・・・・・Impurity-introduced semiconductor region

Claims (1)

[Scope of Claims] 1. A semiconductor substrate and an impurity-introduced semiconductor region into which an impurity is introduced, and by injecting minority carriers from the impurity-introduced semiconductor region to the semiconductor substrate side or vice versa, By flowing majority carriers from the semiconductor substrate side to the impurity-introduced semiconductor region side or vice versa, or by extending or shrinking a depletion layer extending from the impurity-introduced semiconductor region side to the semiconductor substrate side. 1. A semiconductor device which provides the above-mentioned function, wherein the impurity-introduced semiconductor region is formed on the semiconductor substrate and not within the semiconductor substrate. 2. Having a semiconductor substrate and an impurity-introduced semiconductor region into which impurities are introduced, and by flowing majority carriers from the semiconductor substrate side to the impurity-introduced semiconductor region side or vice versa, or by flowing the majority carriers from the semiconductor substrate side to the impurity-introduced semiconductor region side. In a semiconductor element in which a desired function can be obtained by extending or contracting a depletion layer extending from the semiconductor substrate toward the semiconductor substrate, the impurity-doped semiconductor region is replaced with a Schottky electrode, and the impurity-doped semiconductor region extends from the semiconductor substrate to the Schottky electrode side. A semiconductor device characterized in that a desired function can be obtained by flowing majority carriers to or vice versa, or by extending or contracting a depletion layer extending from the Schottky electrode side to the semiconductor substrate side.