CN108598181B - Universal voltage-stabilizing diode structure - Google Patents
Universal voltage-stabilizing diode structure Download PDFInfo
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- CN108598181B CN108598181B CN201810484646.XA CN201810484646A CN108598181B CN 108598181 B CN108598181 B CN 108598181B CN 201810484646 A CN201810484646 A CN 201810484646A CN 108598181 B CN108598181 B CN 108598181B
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- electrode
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- 230000000087 stabilizing effect Effects 0.000 claims abstract description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000003381 stabilizer Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thermistors And Varistors (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The invention discloses a universal voltage-stabilizing diode structure, which comprises a shell, wherein two sides of the shell are connected with an electrode interface, one side of the electrode interface is electrically connected with pins, one side of the electrode interface is connected with a first wire guide plate, one side of the first wire guide plate is electrically connected with an electrode protection layer, one side of the electrode protection layer is connected with a second wire guide plate, the right side of the second wire guide plate is connected with a PN junction, the PN junction is connected with a voltage stabilizing device through the second wire guide plate, the voltage stabilizing device comprises a numerical plate, a current tube is arranged below the numerical plate, the lower part of the current tube is electrically connected with a variable voltage bearing, the left side of the current tube is connected with an inductance coil, and the invention effectively improves the electrifying quality by arranging the electrode protection layer and the voltage stabilizing device, has long service life, and the larger working current, the smaller dynamic resistance and the better voltage stabilizing performance, the application range is enlarged, thereby achieving the best application effect.
Description
Technical Field
The invention relates to the technical field of circuit equipment, in particular to a universal voltage-stabilizing diode structure.
Background
The voltage stabilizing diode is also called Zener diode, and is a surface contact type crystal diode made of silicon material, called as voltage stabilizing tube for short, the diode is a semiconductor device with high resistance until the critical reverse breakdown voltage, when the voltage stabilizing tube breaks down in the reverse direction, the end voltage is almost unchanged in a certain current range or a certain power loss range, and the voltage stabilizing diode shows the voltage stabilizing characteristic, so the voltage stabilizing diode is widely applied to a voltage stabilizing power supply and a limiting circuit, the voltage stabilizing diode is graded according to the breakdown voltage, because of the characteristic, the voltage stabilizing tube is mainly used as a voltage stabilizer or a voltage reference element, the voltage stabilizing diode can be connected in series so as to be used at higher voltage, and more stable voltage can be obtained through the series connection.
The current voltage stabilizing diode has the problems of unstable input current, short service life, complex use and influence on the electrifying quality, and provides a general voltage stabilizing diode structure.
Disclosure of Invention
The invention aims to provide a universal voltage-stabilizing diode structure, which solves the problems that the input current of the existing diode is not stable enough, the service life is short, the use is complex, and the electrifying quality is influenced.
In order to achieve the purpose, the invention is realized by the following technical scheme: the utility model provides a general zener diode structure, includes the casing, the casing both sides link to each other with the electrode interface, and electrode interface one side and pin electric connection, electrode interface one side links to each other with first wiring board, and first wiring board one side and electrode inoxidizing coating electric connection, electrode inoxidizing coating one side links to each other with the second wiring board, and second wiring board right side is connected with the PN junction, the PN junction links to each other with voltage regulator device through the second wiring board, voltage regulator device includes the numerical value board, the electric current pipe is installed to numerical value board below, and electric current pipe below and vary voltage bearing electric connection, electric current pipe left side links to each other with the inductance coils together.
Preferably, the product model is marked on the outer surface of the numerical plate, and the numerical plate is a convex PET plastic plate, so that the numerical plate is convenient to use.
Preferably, the current tube is matched with the transformer bearing for use, and the current tube is a cylindrical bipolar transistor, so that voltage stabilization is facilitated, and the optimal use effect is achieved.
Preferably, the magnetic iron wire is arranged on the outer surface of the inductance coil, so that the electromagnetic induction is increased, and the service life is long.
Preferably, the electrode interface is matched with the pin for use, and the electrode interface is respectively a cathode and an anode, so that the flexible use is facilitated, and the safety and the reliability are realized.
Preferably, a chip is arranged in the electrode protective layer, and the chip is a miniature silicon wafer, so that the current pressure can be induced, and the functional diversity is improved.
Compared with the prior art, the invention has the beneficial effects that:
the invention effectively improves the electrifying quality by arranging the electrode protective layer and the voltage stabilizing device, has long service life, has higher working current, smaller dynamic resistance and better voltage stabilizing performance, and enlarges the application range, thereby achieving the best use effect.
Drawings
Fig. 1 is a schematic structural diagram of a general zener diode according to the present invention;
fig. 2 is a schematic structural diagram of a voltage stabilizer according to the present invention;
in the figure: the device comprises a shell 1, an electrode interface 2, a pin 3, a first conducting plate 4, an electrode protective layer 5, a second conducting plate 6, a PN junction 7, a voltage stabilizer 8, a numerical plate 81, a current tube 82, a transformer bearing 83 and an inductance coil 84.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, the present invention provides a technical solution: a universal voltage-stabilizing diode structure comprises a shell 1, wherein two sides of the shell 1 are connected with an electrode interface 2, one side of the electrode interface 2 is electrically connected with a pin 3, one side of the electrode interface 2 is connected with a first wire guide plate 4, one side of the first wire guide plate 4 is electrically connected with an electrode protection layer 5, one side of the electrode protection layer 5 is connected with a second wire guide plate 6, the right side of the second wire guide plate 5 is connected with a PN junction 7, the PN7 junction is connected with a voltage stabilizing device 8 through the second wire guide plate 6, the voltage stabilizing device 8 comprises a numerical plate 81, a current pipe 82 is arranged below the numerical plate 81, the lower part of the current pipe 82 is electrically connected with a voltage-stabilizing bearing 83, the left side of the bipolar current pipe 82 is connected with an inductance coil 84, the outer surface of the numerical plate 81 is marked with a product model, the numerical plate 1 is a convex PET plastic plate, the current pipe 82 is matched with the voltage-stabilizing bearing 83, and, magnetic iron wires are arranged on the outer surface of the inductance coil 84, the electrode interface 2 is matched with the pins 3 for use, the electrode interface 2 is respectively a cathode and an anode, a chip is arranged inside the electrode protective layer 5, and the chip is specifically a micro silicon wafer.
The working principle is as follows: the during operation, it is electrically conductive with pin 3's cooperation to utilize electrode interface 2, utilize first current conducting plate 4 input current, 5 regulated voltage of electrode inoxidizing coating, utilize PN junction 7 with P type semiconductor and N type semiconductor preparation on same semiconductor substrate, utilize numerical value board 81 to look over the product model, the cooperation through electric current pipe 82 and vary voltage bearing 3 is transmitted, the effectual circular telegram quality that has improved, long service life, operating current is big more, dynamic resistance is little, the better the voltage stabilization performance, the application range has been enlarged, thereby reach best result of use.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (6)
1. A universal voltage-stabilizing diode structure comprises a shell (1), wherein two sides of the shell (1) are connected with an electrode interface (2), the electrode interface (2) is electrically connected with a pin (3), one side of one electrode interface (2) is electrically connected with the pin (3), the other side is electrically connected with one side of the electrode protective layer (5) through the first lead plate (4), the other side of the electrode protective layer (5) is connected with a PN junction (7) through a second wire guide plate (6), the PN (7) junction is connected with a voltage stabilizing device (8) through another second wire guide plate (6), the voltage stabilizer (8) comprises a numerical plate (81), a current tube (82) is arranged below the numerical plate (81), and the lower part of the current tube (82) is electrically connected with the transformer bearing (83), and one side of the current tube (82) is connected with the inductance coil (84).
2. A universal zener diode structure as claimed in claim 1 wherein the number plate (81) is marked with a product model on its outer surface and the number plate (1) is embodied as a raised PET plastic plate.
3. A universal zener diode structure as claimed in claim 1 wherein the current tube (82) is used in conjunction with a transformer bearing (83), and the current tube (82) is embodied as a cylindrical bipolar transistor.
4. The universal zener diode structure of claim 1 wherein the inductor (84) has magnetic iron wires disposed on an outer surface thereof.
5. A conventional zener diode structure according to claim 1 wherein the electrode interface (2) is used in conjunction with the pin (3), and the electrode interface (2) is a cathode and an anode, respectively.
6. A universal zener diode structure as claimed in claim 1 wherein the electrode shield (5) has a chip mounted therein, and the chip is embodied as a microsilicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810484646.XA CN108598181B (en) | 2018-05-20 | 2018-05-20 | Universal voltage-stabilizing diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810484646.XA CN108598181B (en) | 2018-05-20 | 2018-05-20 | Universal voltage-stabilizing diode structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108598181A CN108598181A (en) | 2018-09-28 |
| CN108598181B true CN108598181B (en) | 2021-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810484646.XA Expired - Fee Related CN108598181B (en) | 2018-05-20 | 2018-05-20 | Universal voltage-stabilizing diode structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3416046A (en) * | 1965-12-13 | 1968-12-10 | Dickson Electronics Corp | Encased zener diode assembly and method of producing same |
| US4171528A (en) * | 1977-06-13 | 1979-10-16 | International Telephone And Telegraph Corporation | Solderable zener diode |
| JPS5772389A (en) * | 1980-10-24 | 1982-05-06 | Hitachi Ltd | Constant-voltage diode |
| CN85101319A (en) * | 1985-04-01 | 1987-01-10 | 株式会社日立制作所 | Voltage stabilizing didoe |
| CN207009442U (en) * | 2017-05-11 | 2018-02-13 | 安徽旭特电子科技有限公司 | A kind of general voltage-stabilizing diode structure |
-
2018
- 2018-05-20 CN CN201810484646.XA patent/CN108598181B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3416046A (en) * | 1965-12-13 | 1968-12-10 | Dickson Electronics Corp | Encased zener diode assembly and method of producing same |
| US4171528A (en) * | 1977-06-13 | 1979-10-16 | International Telephone And Telegraph Corporation | Solderable zener diode |
| JPS5772389A (en) * | 1980-10-24 | 1982-05-06 | Hitachi Ltd | Constant-voltage diode |
| CN85101319A (en) * | 1985-04-01 | 1987-01-10 | 株式会社日立制作所 | Voltage stabilizing didoe |
| CN207009442U (en) * | 2017-05-11 | 2018-02-13 | 安徽旭特电子科技有限公司 | A kind of general voltage-stabilizing diode structure |
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| Publication number | Publication date |
|---|---|
| CN108598181A (en) | 2018-09-28 |
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