JPS5763881A - One-dimensional oscillation controlling device in lateral distribution feedback type semiconductor laser - Google Patents

One-dimensional oscillation controlling device in lateral distribution feedback type semiconductor laser

Info

Publication number
JPS5763881A
JPS5763881A JP55139169A JP13916980A JPS5763881A JP S5763881 A JPS5763881 A JP S5763881A JP 55139169 A JP55139169 A JP 55139169A JP 13916980 A JP13916980 A JP 13916980A JP S5763881 A JPS5763881 A JP S5763881A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
diffraction grid
type
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55139169A
Other languages
Japanese (ja)
Inventor
Ikuo Suemune
Masamichi Yamanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP55139169A priority Critical patent/JPS5763881A/en
Publication of JPS5763881A publication Critical patent/JPS5763881A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To stabilize oscillation behavior by controlling one-dimensional oscillation, by providing second diffraction grid inclined at a prescribed angle as compared with first diffraction grid which is provided at right angle toward laser end surface. CONSTITUTION:On an N type GaAs substrate 18, an N type Ga1-yAs layer 15, an N type GaAs active layer 13 and a P type Ga1-xAlxAs photowaveguide layer 14 are provided, and on one side of this photowaveguide layer 14, a diffraction grid 2 is provided at right angle toward a laser end surface, and on the other side of the layer, a diffraction grid 6 is provided by being inclined at a prescribed angle toward the aforementioned diffraction grid, and then, on prescribed location, a P type Ga1-yAlyAs layer 16 and P type GaAs electrodes 19 and 20 are provided in turn. It is possible, by doing so, to stabilize oscillation behavior by controlling one- dimensional oscillation in a semiconductor laser.
JP55139169A 1980-10-04 1980-10-04 One-dimensional oscillation controlling device in lateral distribution feedback type semiconductor laser Pending JPS5763881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55139169A JPS5763881A (en) 1980-10-04 1980-10-04 One-dimensional oscillation controlling device in lateral distribution feedback type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55139169A JPS5763881A (en) 1980-10-04 1980-10-04 One-dimensional oscillation controlling device in lateral distribution feedback type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5763881A true JPS5763881A (en) 1982-04-17

Family

ID=15239178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55139169A Pending JPS5763881A (en) 1980-10-04 1980-10-04 One-dimensional oscillation controlling device in lateral distribution feedback type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5763881A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0141420A2 (en) * 1983-11-08 1985-05-15 Sharp Kabushiki Kaisha Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0141420A2 (en) * 1983-11-08 1985-05-15 Sharp Kabushiki Kaisha Semiconductor laser device

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