JPS5627989A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5627989A
JPS5627989A JP10342779A JP10342779A JPS5627989A JP S5627989 A JPS5627989 A JP S5627989A JP 10342779 A JP10342779 A JP 10342779A JP 10342779 A JP10342779 A JP 10342779A JP S5627989 A JPS5627989 A JP S5627989A
Authority
JP
Japan
Prior art keywords
layer
energy gap
substrate
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10342779A
Other languages
Japanese (ja)
Inventor
Hiroshi Nishi
Mitsuhiro Yano
Kimito Takusagawa
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10342779A priority Critical patent/JPS5627989A/en
Publication of JPS5627989A publication Critical patent/JPS5627989A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To contrive the simplification of lateral oscillation mode for the semiconductor light emitting device and the stabilization of operation thereof by employing a substrate having an energy gap larger than that of an active layer and incorporating a reverse waveguide action out of a stripe to control the lateral attitude thereof. CONSTITUTION:A striped recess 5A is formed on a semiconductor substrate 5, and the first clad layer 4, an active layer 3 and the second clad layer 2 are sequentially formed thereon. The energy gap Eg2 of the layer 2, the energy gap Eg3 of the layer 3, the energy gap Eg4 of the layer 4 and the energy gap Eg5 of the substrate 5 are so selected as to become Eg2approx.=Eg4, Eg5>Eg4>Eg3, and the conductivity of the clad layers 4 and 2 are set in reverse type to incorporate reverse waveguide operation out of the striped portion of the substrate 5.
JP10342779A 1979-08-14 1979-08-14 Semiconductor light emitting device Pending JPS5627989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10342779A JPS5627989A (en) 1979-08-14 1979-08-14 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10342779A JPS5627989A (en) 1979-08-14 1979-08-14 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5627989A true JPS5627989A (en) 1981-03-18

Family

ID=14353729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10342779A Pending JPS5627989A (en) 1979-08-14 1979-08-14 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5627989A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS545394A (en) * 1977-06-13 1979-01-16 Xerox Corp Method of producing diode laser
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5451491A (en) * 1977-09-30 1979-04-23 Hitachi Ltd Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS545394A (en) * 1977-06-13 1979-01-16 Xerox Corp Method of producing diode laser
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5451491A (en) * 1977-09-30 1979-04-23 Hitachi Ltd Semiconductor laser

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