JPS62182570U - - Google Patents
Info
- Publication number
- JPS62182570U JPS62182570U JP7049186U JP7049186U JPS62182570U JP S62182570 U JPS62182570 U JP S62182570U JP 7049186 U JP7049186 U JP 7049186U JP 7049186 U JP7049186 U JP 7049186U JP S62182570 U JPS62182570 U JP S62182570U
- Authority
- JP
- Japan
- Prior art keywords
- current confinement
- confinement layer
- semiconductor
- substrate
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Description
第１図ａ〜ｄは本考案の一実施例の製造工程を
示す工程別断面図、第２図は一般的な半導体レー
ザを示す断面図、第３図は電流狭窄層のキヤリア
濃度としきい値電流との関係を示す特性図である
。
１……Ｐ型半導体基板、２……電流狭窄層、３
……発振層。
Figures 1 a to d are cross-sectional views showing the manufacturing process of an embodiment of the present invention, Figure 2 is a cross-sectional view of a general semiconductor laser, and Figure 3 is a current confinement layer carrier concentration and threshold value. FIG. 3 is a characteristic diagram showing the relationship with current. 1... P-type semiconductor substrate, 2... Current confinement layer, 3
...oscillation layer.
Claims (1)
たＴｅドープのｎ型ＧａＡｓからなる電流狭窄層
、該電流狭窄層上に積層された発振層からなる半
導体レーザにおいて、 上記電流狭窄層のキヤリア濃度を２．０〜３．
５×１０１８cm−３としたことを特徴とする半導
体レーザ。[Claims for Utility Model Registration] A semiconductor comprising a P-type semiconductor substrate, a current confinement layer made of Te-doped n-type GaAs formed on one main surface of the substrate, and an oscillation layer laminated on the current confinement layer. In the laser, the carrier concentration of the current confinement layer is set to 2.0 to 3.
A semiconductor laser characterized by having a diameter of 5×10 18 cm −3 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986070491U JPH085575Y2 (en) | 1986-05-09 | 1986-05-09 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986070491U JPH085575Y2 (en) | 1986-05-09 | 1986-05-09 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62182570U true JPS62182570U (en) | 1987-11-19 |
| JPH085575Y2 JPH085575Y2 (en) | 1996-02-14 |
Family
ID=30912175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986070491U Expired - Lifetime JPH085575Y2 (en) | 1986-05-09 | 1986-05-09 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH085575Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159084A (en) * | 1981-03-25 | 1982-10-01 | Sharp Corp | Semiconductor laser element |
-
1986
- 1986-05-09 JP JP1986070491U patent/JPH085575Y2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159084A (en) * | 1981-03-25 | 1982-10-01 | Sharp Corp | Semiconductor laser element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH085575Y2 (en) | 1996-02-14 |
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