JPS62193756U - - Google Patents
Info
- Publication number
- JPS62193756U JPS62193756U JP8208586U JP8208586U JPS62193756U JP S62193756 U JPS62193756 U JP S62193756U JP 8208586 U JP8208586 U JP 8208586U JP 8208586 U JP8208586 U JP 8208586U JP S62193756 U JPS62193756 U JP S62193756U
- Authority
- JP
- Japan
- Prior art keywords
- cladding layer
- composition
- layer
- thickness
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案の一実施例を示す断面図、第２
図は従来の半導体レーザを示す断面図である。
図において、１はＧａＡｓ基板結晶、２はｎ型
クラツド層、３は（ＡｌｘＧａ１―ｘ）０．５Ｉ
ｎ０．５Ｐ活性層、４は第一のクラツド層で（Ａ
ｌｙＧａ１―ｙ）０．５Ｉｎ０．５Ｐ、５は第二
のグラツド層で（ＡｌｚＧａ１―ｚ）０．５Ｉｎ
０．５Ｐ、６はｎ型ＧａＡｓブロツク層、７はｐ
型オーミツク電極、８はＺｎ拡散層、９はｎ型拡
散層（ｎ型オーミツク電極）である。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is a cross-sectional view showing a conventional semiconductor laser. In the figure, 1 is a GaAs substrate crystal, 2 is an n-type cladding layer, and 3 is (AlxGa 1 -x) 0 . 5 I
n 0 . 5 P active layer, 4 is the first cladding layer (A
lyGa 1 -y) 0 . 5 In 0 . 5 P, 5 is the second gradient layer (AlzGa 1 -z) 0 . 5 In
0 . 5 P, 6 is n-type GaAs block layer, 7 is p
8 is a Zn diffusion layer, and 9 is an n-type ohmic electrode (n-type ohmic electrode).
Claims (1)
ラツド層とからなり、活性層の組成を（ＡｌｘＧ
ａ１―ｘ）０．５Ｉｎ０．５Ｐとし、この活性層
に直接に接する第一のクラツド層の組成を（Ａｌ
ｙＧａ１―ｙ）０．５Ｉｎ０．５Ｐとし、かつ第
一のクラツド層に直接に接する第二のクラツド層
の組成を（ＡｌｚＧａ１―ｚ）０．５Ｉｎ０．５
Ｐとするとき、ｘ＜ｚ＜ｙであり、第一のクラツ
ド層の層厚が１００Åより厚くかつ第二のクラツ
ド層の層厚より薄いことを特徴とする発光素子。 The p-type cladding layer consists of a first cladding layer and a second cladding layer, and the composition of the active layer is (AlxG
a 1 - x) 0 . 5 In 0 . 5P , and the composition of the first cladding layer directly in contact with this active layer is (Al
yGa 1 -y) 0 . 5 In 0 . 5P , and the composition of the second cladding layer directly in contact with the first cladding layer is (AlzGa 1 -z) 0 . 5 In 0 . 5
A light emitting device characterized in that, when P, x<z<y, and the thickness of the first cladding layer is thicker than 100 Å and thinner than the thickness of the second cladding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8208586U JPS62193756U (en) | 1986-05-30 | 1986-05-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8208586U JPS62193756U (en) | 1986-05-30 | 1986-05-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193756U true JPS62193756U (en) | 1987-12-09 |
Family
ID=30934419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8208586U Pending JPS62193756U (en) | 1986-05-30 | 1986-05-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193756U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542079A (en) * | 1977-06-07 | 1979-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Light emission unit of semiconductor |
-
1986
- 1986-05-30 JP JP8208586U patent/JPS62193756U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542079A (en) * | 1977-06-07 | 1979-01-09 | Nippon Telegr & Teleph Corp <Ntt> | Light emission unit of semiconductor |
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