JPH01162265U - - Google Patents
Info
- Publication number
- JPH01162265U JPH01162265U JP5499188U JP5499188U JPH01162265U JP H01162265 U JPH01162265 U JP H01162265U JP 5499188 U JP5499188 U JP 5499188U JP 5499188 U JP5499188 U JP 5499188U JP H01162265 U JPH01162265 U JP H01162265U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- active layer
- layer
- laser device
- alxga
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005253 cladding Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図はこの考案の一実施例による半導体レー
ザ装置を示す断面図、第２図ａ〜ｄは第１図の製
造工程を示す断面図、第３図は従来の半導体レー
ザ装置を示す断面図である。図において、１はＰ
―ＧａＡｓ基板、２はＰ―ＡｌｘＧａ１―ＸＡｓ
下クラツド層、３はＰ―ＡｌｘＧａ１―ＸＡｓ
下クラツド層、４はＡｌｙＧａ１―ｙＡｓ活性
層、５はＡｌｘＧａ１―ＸＡｓ上クラツド層の
拡散領域（電流阻止層）、６はＮ―ＡｌｘＧａ１
―ＸＡｓ上クラツド層、７はＮ―ＡｌｘＧａ１
―ＸＡｓ上クラツド層、８はＮ―ＧａＡｓコン
タクト層、９，１０は電極を示す。なお、図中、
同一符号は同一、又は相当部分を示す。
FIG. 1 is a sectional view showing a semiconductor laser device according to an embodiment of the invention, FIGS. 2 a to d are sectional views showing the manufacturing process of FIG. 1, and FIG. 3 is a sectional view showing a conventional semiconductor laser device. It is. In the figure, 1 is P
-GaAs substrate, 2 is P-AlxGa 1 -XAs
Lower cladding layer, 3 is P-AlxGa 1 -XAs
Lower cladding layer, 4 is AlyGa 1 - y As active layer, 5 is AlxGa 1 -XAs diffusion region (current blocking layer) of upper cladding layer, 6 is N-AlxGa 1
-XAs upper cladding layer, 7 is N-AlxGa 1
- XAs upper cladding layer; 8 is an N--GaAs contact layer; 9 and 10 are electrodes. In addition, in the figure,
The same reference numerals indicate the same or equivalent parts.
Claims (1)
含む各層が一様に折れ曲り、さらには、極性が異
なり、かつ、ドーピング量を各々適当に調整した
薄い２つの層で活性層をはさみ込んだことを特徴
とする半導体レーザ装置。 Each layer, including the active layer, is bent uniformly near the light-emitting end face of the semiconductor laser, and the active layer is sandwiched between two thin layers with different polarities and appropriately adjusted doping amounts. Semiconductor laser device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5499188U JPH01162265U (en) | 1988-04-21 | 1988-04-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5499188U JPH01162265U (en) | 1988-04-21 | 1988-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01162265U true JPH01162265U (en) | 1989-11-10 |
Family
ID=31280899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5499188U Pending JPH01162265U (en) | 1988-04-21 | 1988-04-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01162265U (en) |
-
1988
- 1988-04-21 JP JP5499188U patent/JPH01162265U/ja active Pending