JPS63185264U - - Google Patents
Info
- Publication number
- JPS63185264U JPS63185264U JP7587987U JP7587987U JPS63185264U JP S63185264 U JPS63185264 U JP S63185264U JP 7587987 U JP7587987 U JP 7587987U JP 7587987 U JP7587987 U JP 7587987U JP S63185264 U JPS63185264 U JP S63185264U
- Authority
- JP
- Japan
- Prior art keywords
- cladding layer
- layer
- cladding
- divided
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Description
第１図ａ〜ｄは本考案の一実施例半導体レーザ
の製造工程を示す工程別断面図、第２図は発振し
きい値電流特性を示す特性図、第３図は従来例を
示す断面図である。
１１……基板、１２……第１クラツド層、１３
……活性層、１４……第２クラツド層、１６……
溝、１７……中央部、１８……外側部。
Figures 1 a to d are cross-sectional views showing the manufacturing process of a semiconductor laser according to an embodiment of the present invention, Figure 2 is a characteristic diagram showing oscillation threshold current characteristics, and Figure 3 is a cross-sectional view showing a conventional example. It is. 11...Substrate, 12...First cladding layer, 13
... Active layer, 14 ... Second clad layer, 16 ...
Groove, 17... central part, 18... outer part.
Claims (1)
ド層より小なるバンドギヤツプエネルギを有する
活性層、上記第１クラツド層と同等のバンドギヤ
ツプエネルギを有する第２クラツド層を順次積層
してなる半導体レーザであつて、 上記第２クラツド層表面より上記活性層に達し
ない程度の深さを有し、互いに平行に延在する１
対の溝により上記第２クラツド層が３分割される
と共に分割された第２クラツド層のうち外側に位
置する層はイオンが注入され高抵抗化されている
ことを特徴とする半導体レーザ。[Claims for Utility Model Registration] A first cladding layer on a semiconductor substrate, an active layer having a bandgap energy smaller than that of the first cladding layer, and an active layer having a bandgap energy equivalent to the first cladding layer. A semiconductor laser formed by sequentially laminating second cladding layers, the first cladding layer having a depth from the surface of the second cladding layer to an extent that does not reach the active layer, and extending parallel to each other.
A semiconductor laser characterized in that the second cladding layer is divided into three by a pair of grooves, and the outer layer of the divided second cladding layer is implanted with ions to have a high resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7587987U JPS63185264U (en) | 1987-05-20 | 1987-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7587987U JPS63185264U (en) | 1987-05-20 | 1987-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63185264U true JPS63185264U (en) | 1988-11-29 |
Family
ID=30922432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7587987U Pending JPS63185264U (en) | 1987-05-20 | 1987-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63185264U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022049996A1 (en) * | 2020-09-07 | 2022-03-10 | ソニーグループ株式会社 | Semiconductor laser and semiconductor laser device |
-
1987
- 1987-05-20 JP JP7587987U patent/JPS63185264U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022049996A1 (en) * | 2020-09-07 | 2022-03-10 | ソニーグループ株式会社 | Semiconductor laser and semiconductor laser device |