JPS6411565U - - Google Patents
Info
- Publication number
- JPS6411565U JPS6411565U JP10593287U JP10593287U JPS6411565U JP S6411565 U JPS6411565 U JP S6411565U JP 10593287 U JP10593287 U JP 10593287U JP 10593287 U JP10593287 U JP 10593287U JP S6411565 U JPS6411565 U JP S6411565U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- conductivity type
- groove
- semiconductor laser
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
Description
第１図は本考案の一実施例の断面図、第２図は
第１図の半導体レーザの応力分布特性曲線図、第
３図は本考案の他の実施例の断面図、第４図は従
来の半導体レーザの断面図、第５図は第４図の半
導体レーザの応力分布特性曲線図である。
１……ｐ型ＧａＡｓ基板、２，８，９……ｎ型
ＧａＡｓブロツク層、３……発振層、４……第１
クラツド層、５……活性層、６……第２クラツド
層、７……キヤツプ層、１１……ｐ電極、１２…
…ｎ電極、１３……Ｖ字状ストライプ溝、１４，
１５，１６，１７……補助ストライプ溝。
FIG. 1 is a cross-sectional view of one embodiment of the present invention, FIG. 2 is a stress distribution characteristic curve diagram of the semiconductor laser of FIG. 1, FIG. 3 is a cross-sectional view of another embodiment of the present invention, and FIG. FIG. 5 is a sectional view of a conventional semiconductor laser, and FIG. 5 is a stress distribution characteristic curve diagram of the semiconductor laser shown in FIG. 1... p-type GaAs substrate, 2, 8, 9... n-type GaAs block layer, 3... oscillation layer, 4... first
Clad layer, 5... Active layer, 6... Second clad layer, 7... Cap layer, 11... P electrode, 12...
...N electrode, 13...V-shaped stripe groove, 14,
15, 16, 17...auxiliary stripe grooves.
Claims (1)
記第１導電型の反対の第２の導電型を有し、上記
基板上に積層されると共に表面側より上記基板に
達するストライプ状の溝が形成されたブロツク層
、該ブロツク層上に積層された発振層とを有する
半導体レーザに於て、上記ストライプ状の溝の両
側に該溝と並行且つ基板に到達しないストライプ
状の溝を有することを特徴とする半導体レーザ。A substrate having a first conductivity type of p-type or n-type, a stripe-shaped substrate having a second conductivity type opposite to the first conductivity type, which is laminated on the substrate and reaches the substrate from the surface side. In a semiconductor laser having a block layer in which a groove is formed and an oscillation layer laminated on the block layer, striped grooves are provided on both sides of the striped groove parallel to the groove and not reaching the substrate. A semiconductor laser characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10593287U JPS6411565U (en) | 1987-07-10 | 1987-07-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10593287U JPS6411565U (en) | 1987-07-10 | 1987-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6411565U true JPS6411565U (en) | 1989-01-20 |
Family
ID=31338989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10593287U Pending JPS6411565U (en) | 1987-07-10 | 1987-07-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6411565U (en) |
-
1987
- 1987-07-10 JP JP10593287U patent/JPS6411565U/ja active Pending