JPS63200359U - - Google Patents
Info
- Publication number
- JPS63200359U JPS63200359U JP9077987U JP9077987U JPS63200359U JP S63200359 U JPS63200359 U JP S63200359U JP 9077987 U JP9077987 U JP 9077987U JP 9077987 U JP9077987 U JP 9077987U JP S63200359 U JPS63200359 U JP S63200359U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- grooves
- laser element
- element portion
- heterojunction structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005253 cladding Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図Ａは、この考案の第一実施例の半導体レ
ーザ装置を概略的に示す断面図、第１図Ｂは、こ
の考案の第二実施例の半導体レーザ装置を概略的
に示す断面図、第２図Ａ〜Ｄは、第１図Ａに示し
た半導体レーザ装置の製造方法の一例を示す製造
工程図、第３図は、従来技術の説明に供する図で
あつて、ＬＯＣ型の半導体レーザの構造を概略的
に示す断面図である。
３１……化合物半導体下地（Ｎ型ＧａＡｓ基板
）、３３……第一溝、３５……第二溝、３７，３
７ａ，３７ｂ……下側クラツド層（Ｎ型ＡｌｙＧ
ａ１−ｙＡｓ層）、３９……光導波層（Ｎ型Ａｌ
ｚＧａ１−ｚＡｓ層）、４１，４１ａ，４１ｂ…
…活性層（ＡｌｘＧａ１−ｘＡｓ層）、４３，４
３ａ，４３ｂ……上側クラツド層（Ｐ型ＡｌｙＧ
ａ１−ｙＡｓ層）、４５，４５ａ，４５ｂ……電
流阻止層（Ｎ型ＧａＡｓ層）、４７ａ，４７ｂ…
…Ｐ拡散領域、４９ａ，４９ｂ……Ｐ側電極、５
１……第一レーザ素子部、５３……第二レーザ素
子部、５５……Ｎ側電極、５７……分離溝、６１
……内部電流狭窄層（Ｐ型ＧａＡｓ層）、６５ａ
，６５ｂ……キヤツプ層（Ｐ型ＧａＡｓ層）、７
１……凹部。
FIG. 1A is a cross-sectional view schematically showing a semiconductor laser device according to a first embodiment of this invention, and FIG. 1B is a cross-sectional view schematically showing a semiconductor laser device according to a second embodiment of this invention. 2A to 2D are manufacturing process diagrams showing an example of a method for manufacturing the semiconductor laser device shown in FIG. 1A, and FIG. FIG. 2 is a cross-sectional view schematically showing the structure of FIG. 31...Compound semiconductor base (N-type GaAs substrate), 33...First groove, 35...Second groove, 37,3
7a, 37b...lower cladding layer (N-type Al y G
a 1-y As layer), 39... optical waveguide layer (N-type Al
z Ga 1-z As layer), 41, 41a, 41b...
...Active layer (Al x Ga 1-x As layer), 43,4
3a, 43b... Upper cladding layer (P-type Al y G
a1-y As layer), 45, 45a, 45b... current blocking layer (N-type GaAs layer), 47a, 47b...
...P diffusion region, 49a, 49b...P side electrode, 5
1... First laser element part, 53... Second laser element part, 55... N side electrode, 57... Separation groove, 61
...Internal current confinement layer (P-type GaAs layer), 65a
, 65b...cap layer (P-type GaAs layer), 7
1... Concavity.
Claims (1)
あつて互いが並列になるように設けられた第一及
び第二溝と、 前記第一溝上方に設けられ下側クラツド層、光
導波層、活性層及び上側クラツド層のダブルヘテ
ロ接合構造を有するＬＯＣ型の第一レーザ素子部
と、 前記第二溝上方に設けられ下側クラツド層、活
性層及び上側クラツド層のダブルヘテロ接合構造
を有する第二レーザ素子部と を具えたことを特徴とする半導体レーザ装置。[Claims for Utility Model Registration] First and second grooves that are striped grooves provided in parallel to each other on a common compound semiconductor base, and a lower cladding provided above the first grooves. a LOC-type first laser element portion having a double heterojunction structure of a layer, an optical waveguide layer, an active layer, and an upper cladding layer; A semiconductor laser device comprising: a second laser element portion having a heterojunction structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9077987U JPS63200359U (en) | 1987-06-15 | 1987-06-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9077987U JPS63200359U (en) | 1987-06-15 | 1987-06-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63200359U true JPS63200359U (en) | 1988-12-23 |
Family
ID=30950957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9077987U Pending JPS63200359U (en) | 1987-06-15 | 1987-06-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63200359U (en) |
-
1987
- 1987-06-15 JP JP9077987U patent/JPS63200359U/ja active Pending
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