JPH0254592A - Semiconductor memory - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser having a satisfactory yield and high output by burying a window layer having a larger energy gap than that of a laser light on the end face of the laser. CONSTITUTION:An undoped Ga1-yAlyAs window layer 2 is epitaxially grown on an n-type GaAs substrate 1 by a MOCVD method or the like, and the layer 2 is patterned and etched. Then, an n-type Ga1-xAlxAs clad layer 3, an n-type GaAs active layer 4, a p-type Ga1-xAlxAs clad layer 5, and a p-type GaAs contact layer 6 are sequentially epitaxially grown.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser, and particularly to the structure of a laser end face.

[Conventional technology]

A conventional method for manufacturing a semiconductor laser will be explained based on the drawings.

FIGS. 2(a) and 2(b) are cross-sectional views for explaining the manufacturing process of a GaAs-based wind stripe laser as an example, in which n-Gap-, Afl,
As cladding layer 3. n-GaAs active layer 4. n-Gap
-xArtXAs cladding layer 3. The n-GaAs cap layer 7 was epitaxially grown by MOCVD or the like (FIG. 2(a)), and then the SiO2 film 8 was deposited on the n-GaAs cap layer 7, and the Sio2 film 8 was patterned. After that, Zn is diffused to the n-GaAs active layer 4. 9 indicates the diffusion layer (FIG. 2(b)).

Note that in the above semiconductor laser, Zn is diffused into the center of the n-GaAs active layer 4 to convert it to p-type, and the n-GaAs
This is a wind stripe laser having a window layer that takes advantage of the fact that S has a larger effective band gap than p-GaAs.

[Problem to be solved by the invention]

Since the conventional wind stripe laser is constructed as described above, the Zn diffusion is performed between the n-GaAs active layer 4 and the n-GaAs active layer 4.
-Gap-XAn, it must be stopped at the interface of the As cladding layer 3, and Zn diffusion must be properly controlled.
There was a problem with yield. In addition, the wind layer is p-type,
Since the difference in the effective bandgap of n-type is used,
There was a problem that high output could not be obtained.

This invention was made to solve the above-mentioned problems, and aims to improve the yield and obtain a semiconductor laser with higher output.

(Means for Solving the Problems) A semiconductor laser according to the present invention is one in which a window layer having an energy gap larger than the energy of laser light is embedded in the laser end face of the semiconductor laser.

[Effect]

In the laser end face of the semiconductor laser according to the present invention, a higher output semiconductor laser can be obtained by using a wind layer having a sufficiently larger energy gap than the laser light.

(Example) An embodiment of the present invention will be described below with reference to the drawings.

FIGS. 1A to 1C are process cross-sectional views showing an embodiment of the semiconductor laser of the present invention. First, an undoped Ga 1-yAλ, As window layer 2 is epitaxially grown on an n-GaAs substrate 1 by MOCVD or the like (
Figure 1(a)). Next, undoped Gap-, Aλ,
The As window layer 2 is patterned and etched (FIG. 1(b)), and then the n-Gat-g AnxA
s cladding layer 3. n-GaAs active layer 4. p-Ga, -
.

AJZxAs cladding layer5. A p-GaAs contact layer 6 is epitaxially grown in sequence. Here, n G
a + -x A fix A S cladding layer 3. The composition ratios x and y of the undoped Gap-, AJ2yAs window layer 2 are set such that X≦y.

Next, the operation of one embodiment of the present invention will be explained. As shown in FIG. 1, the semiconductor laser of the present invention has an undoped Gap-, AJZyAs window layer 2 buried and formed as a window layer.
It is not necessary to obtain a highly accurate pn junction surface by n diffusion, and the energy gap of the wind layer can be made sufficiently larger than the energy of the laser light, making it extremely effective in manufacturing high-power semiconductor lasers. .

In the above embodiments, a GaAs-based double heterojunction laser was used as an example, but the same fabrication and structure is also possible for InP-based double heterojunction lasers, MQW lasers, and other high-power semiconductor lasers. be.

〔Effect of the invention〕

As explained above, in this invention, a wind layer with an energy gap larger than the energy of the laser beam is embedded in the laser end face of a semiconductor laser, so there is no need to create a highly accurate pn junction by diffusion as in the conventional method. The energy gap of the wind layer can be made sufficiently larger than the energy of the laser beam, and a high-output semiconductor laser with good yield can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing the manufacturing process of an embodiment of the semiconductor laser of the present invention, and FIG. 2 is a sectional view showing the manufacturing process of a conventional semiconductor laser. In the figure, 1 is an n-GaAs substrate, 2 is an undoped Gap-, AJl, As window layer, and 3 is an n-Ga, -
xAlxAs cladding layer 4 is n-GaAs active layer,
5 is p-Ga, XAfL, As cladding layer, 6 is p-G
This is an aAs contact layer. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure (a) (a) (b)

Claims (1)

[Claims] A semiconductor laser comprising a lower cladding layer, an active layer and an upper cladding layer on a semiconductor substrate, characterized in that a window layer having an energy gap larger than the energy of laser light is embedded in the laser end face of the semiconductor laser.