JPS55120191A - Semiconductor laser and method of fabricating the same - Google Patents

Semiconductor laser and method of fabricating the same

Info

Publication number
JPS55120191A
JPS55120191A JP2840879A JP2840879A JPS55120191A JP S55120191 A JPS55120191 A JP S55120191A JP 2840879 A JP2840879 A JP 2840879A JP 2840879 A JP2840879 A JP 2840879A JP S55120191 A JPS55120191 A JP S55120191A
Authority
JP
Japan
Prior art keywords
active layer
layer
type
difference
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2840879A
Other languages
Japanese (ja)
Inventor
Shigeyuki Akiba
Kazuo Sakai
Akiya Yamamoto
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP2840879A priority Critical patent/JPS55120191A/en
Publication of JPS55120191A publication Critical patent/JPS55120191A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Abstract

PURPOSE:To sufficiently enclose injection electrons in an active layer of a semiconductor laser by forming the difference of forbidden band width between a p-type clad layer and the active layer large and forming the difference of the forbidden band width between the n-type clad layer and the active layer small. CONSTITUTION:A p-type InP layer 13, and In0.58Ga0.20P0.57P0.10 active layer 16 and an n-type In0.80Ga0.20As0.43P0.57 clad layer 17 are grown on a p-type InP substrate 18 by means of a liquid phase epitaxial growing process, and electrodes 14, 15 are mounted thereon to form a laser. Thus, energy difference DELTAEg(n) becomes large, and an effect of enclosing electrons into the active layer becomes large. However, the energy difference DELTAEg(p) becomes small for the holes, but the holes are diffused at very low rate and enclosed in the active layer almost without leakage.
JP2840879A 1979-03-12 1979-03-12 Semiconductor laser and method of fabricating the same Pending JPS55120191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2840879A JPS55120191A (en) 1979-03-12 1979-03-12 Semiconductor laser and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2840879A JPS55120191A (en) 1979-03-12 1979-03-12 Semiconductor laser and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS55120191A true JPS55120191A (en) 1980-09-16

Family

ID=12247824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2840879A Pending JPS55120191A (en) 1979-03-12 1979-03-12 Semiconductor laser and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS55120191A (en)

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