JPS645077A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS645077A
JPS645077A JP16040987A JP16040987A JPS645077A JP S645077 A JPS645077 A JP S645077A JP 16040987 A JP16040987 A JP 16040987A JP 16040987 A JP16040987 A JP 16040987A JP S645077 A JPS645077 A JP S645077A
Authority
JP
Japan
Prior art keywords
conductivity type
layer
variation
blocking layer
current blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16040987A
Other languages
Japanese (ja)
Inventor
Ichiro Kume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16040987A priority Critical patent/JPS645077A/en
Publication of JPS645077A publication Critical patent/JPS645077A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To make a dug depth uniform and eliminate the problem of variation caused by diffusion and reduce the variation in characteristics by a method wherein a part of a current blocking layer is removed by selective etching and a cap layer is made to grow by an MOCVD method. CONSTITUTION:A 1st conductivity type 1st cladding layer 2, a 2nd conductivity type active layer 3, a 2nd conductivity type 2nd cladding layer 4 and a 1st conductivity type current blocking layer 5 are successively formed on a 1st conductivity type semiconductor substrate 1. Further, after a part of the current blocking layer 5 is removed by etching, a 2nd conductivity type cap layer 6 is formed on it. The respective layers from the cladding layer 2 to the blocking layer 5 are built up by a liquid growth method. The cap layer 6 is built up by an MOCVD method. With this constitution, a dug depth is made to be uniform and the problem of variation caused by diffusion can be eliminated and the variation in characteristics can be reduced.
JP16040987A 1987-06-26 1987-06-26 Light emitting diode Pending JPS645077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16040987A JPS645077A (en) 1987-06-26 1987-06-26 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16040987A JPS645077A (en) 1987-06-26 1987-06-26 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS645077A true JPS645077A (en) 1989-01-10

Family

ID=15714311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16040987A Pending JPS645077A (en) 1987-06-26 1987-06-26 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS645077A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448242U (en) * 1990-08-27 1992-04-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0448242U (en) * 1990-08-27 1992-04-23

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