JPS645077A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS645077A JPS645077A JP16040987A JP16040987A JPS645077A JP S645077 A JPS645077 A JP S645077A JP 16040987 A JP16040987 A JP 16040987A JP 16040987 A JP16040987 A JP 16040987A JP S645077 A JPS645077 A JP S645077A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- layer
- variation
- blocking layer
- current blocking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To make a dug depth uniform and eliminate the problem of variation caused by diffusion and reduce the variation in characteristics by a method wherein a part of a current blocking layer is removed by selective etching and a cap layer is made to grow by an MOCVD method. CONSTITUTION:A 1st conductivity type 1st cladding layer 2, a 2nd conductivity type active layer 3, a 2nd conductivity type 2nd cladding layer 4 and a 1st conductivity type current blocking layer 5 are successively formed on a 1st conductivity type semiconductor substrate 1. Further, after a part of the current blocking layer 5 is removed by etching, a 2nd conductivity type cap layer 6 is formed on it. The respective layers from the cladding layer 2 to the blocking layer 5 are built up by a liquid growth method. The cap layer 6 is built up by an MOCVD method. With this constitution, a dug depth is made to be uniform and the problem of variation caused by diffusion can be eliminated and the variation in characteristics can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16040987A JPS645077A (en) | 1987-06-26 | 1987-06-26 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16040987A JPS645077A (en) | 1987-06-26 | 1987-06-26 | Light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS645077A true JPS645077A (en) | 1989-01-10 |
Family
ID=15714311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16040987A Pending JPS645077A (en) | 1987-06-26 | 1987-06-26 | Light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS645077A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0448242U (en) * | 1990-08-27 | 1992-04-23 |
-
1987
- 1987-06-26 JP JP16040987A patent/JPS645077A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0448242U (en) * | 1990-08-27 | 1992-04-23 |
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