JPS5673479A - Photodiode array - Google Patents

Photodiode array

Info

Publication number
JPS5673479A
JPS5673479A JP15511180A JP15511180A JPS5673479A JP S5673479 A JPS5673479 A JP S5673479A JP 15511180 A JP15511180 A JP 15511180A JP 15511180 A JP15511180 A JP 15511180A JP S5673479 A JPS5673479 A JP S5673479A
Authority
JP
Japan
Prior art keywords
regions
end sections
coated
array
photodiode array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15511180A
Other languages
Japanese (ja)
Other versions
JPS6342863B2 (en
Inventor
Ai Kaminzu Seodore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Japan Inc
Original Assignee
Yokogawa Hewlett Packard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hewlett Packard Ltd filed Critical Yokogawa Hewlett Packard Ltd
Publication of JPS5673479A publication Critical patent/JPS5673479A/en
Publication of JPS6342863B2 publication Critical patent/JPS6342863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To lengthen the life of a photodiode array by a method wherein the end sections of a plurality of diffusion regions forming the array are coated with ultraviolet-ray shield layers in Al, etc. in shapes that the shield layers are located on insulator layers over the end sections of other regions from the end sections of one regions. CONSTITUTION:An n type semiconductor substrate 22 is coated with an oxide film 23, a location of the substrate is regulated by openings formed to the film 23, and a plurality of p<+> type regions are diffusion-formed into the substrate 22. An oxide film 26 is made up on the whole surface again, thus forming a photodiode array. In this constitution, ultraviolet-ray shields 27 in Al, etc. passing no ultraviolet rays are coated being located on the film 26 over the end section of one regions 21 from the end sections of adjacent regions 21. Thus, leakage currents in the case when ultraviolet rays are irradiated can be reduced, and the shortening of the life of the array is prevented.
JP15511180A 1979-11-07 1980-11-04 Photodiode array Granted JPS5673479A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9192779A 1979-11-07 1979-11-07

Publications (2)

Publication Number Publication Date
JPS5673479A true JPS5673479A (en) 1981-06-18
JPS6342863B2 JPS6342863B2 (en) 1988-08-25

Family

ID=22230342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15511180A Granted JPS5673479A (en) 1979-11-07 1980-11-04 Photodiode array

Country Status (1)

Country Link
JP (1) JPS5673479A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222563A (en) * 1982-06-18 1983-12-24 Hitachi Ltd Semiconductor photodetecting device
JPS61131561A (en) * 1984-11-30 1986-06-19 Hamamatsu Photonics Kk Array type semiconductor photodetector
JPS61100504U (en) * 1985-07-04 1986-06-27
JPS63190388A (en) * 1987-02-03 1988-08-05 Toshiba Corp Semiconductor integrated circuit
JPH0391968A (en) * 1989-09-05 1991-04-17 Hamamatsu Photonics Kk Manufacture of photodiode
JPH0391967A (en) * 1989-09-05 1991-04-17 Hamamatsu Photonics Kk Manufacture of photodiode
JPH0391969A (en) * 1989-09-05 1991-04-17 Hamamatsu Photonics Kk Semiconductor photodetector
JPH0391970A (en) * 1989-09-05 1991-04-17 Hamamatsu Photonics Kk Semiconductor photodetector and manufacture thereof
JPH0393280A (en) * 1989-09-05 1991-04-18 Hamamatsu Photonics Kk Manufacture of photodiode
GB2600954A (en) * 2020-11-12 2022-05-18 X Fab Global Services Gmbh Low dark count rate semiconductor structures

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01157269U (en) * 1988-04-22 1989-10-30

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50125692A (en) * 1974-03-20 1975-10-02
JPS51136234A (en) * 1975-05-21 1976-11-25 Toshiba Corp Solid state image device
JPS52131489A (en) * 1976-04-28 1977-11-04 Oki Electric Ind Co Ltd Photoelectric converter
JPS52137921A (en) * 1976-05-14 1977-11-17 Toshiba Corp Solid photographing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50125692A (en) * 1974-03-20 1975-10-02
JPS51136234A (en) * 1975-05-21 1976-11-25 Toshiba Corp Solid state image device
JPS52131489A (en) * 1976-04-28 1977-11-04 Oki Electric Ind Co Ltd Photoelectric converter
JPS52137921A (en) * 1976-05-14 1977-11-17 Toshiba Corp Solid photographing device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222563A (en) * 1982-06-18 1983-12-24 Hitachi Ltd Semiconductor photodetecting device
JPS61131561A (en) * 1984-11-30 1986-06-19 Hamamatsu Photonics Kk Array type semiconductor photodetector
JPS61100504U (en) * 1985-07-04 1986-06-27
JPS63190388A (en) * 1987-02-03 1988-08-05 Toshiba Corp Semiconductor integrated circuit
JPH0391968A (en) * 1989-09-05 1991-04-17 Hamamatsu Photonics Kk Manufacture of photodiode
JPH0391967A (en) * 1989-09-05 1991-04-17 Hamamatsu Photonics Kk Manufacture of photodiode
JPH0391969A (en) * 1989-09-05 1991-04-17 Hamamatsu Photonics Kk Semiconductor photodetector
JPH0391970A (en) * 1989-09-05 1991-04-17 Hamamatsu Photonics Kk Semiconductor photodetector and manufacture thereof
JPH0393280A (en) * 1989-09-05 1991-04-18 Hamamatsu Photonics Kk Manufacture of photodiode
GB2600954A (en) * 2020-11-12 2022-05-18 X Fab Global Services Gmbh Low dark count rate semiconductor structures
US11646389B2 (en) 2020-11-12 2023-05-09 X-FAB Global Services GmbH Low dark count rate semiconductor structures
GB2600954B (en) * 2020-11-12 2023-06-28 X Fab Global Services Gmbh Low dark count rate semiconductor structures

Also Published As

Publication number Publication date
JPS6342863B2 (en) 1988-08-25

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