JPS56157070A - Semiconductor radioactive rays detector - Google Patents

Semiconductor radioactive rays detector

Info

Publication number
JPS56157070A
JPS56157070A JP6008080A JP6008080A JPS56157070A JP S56157070 A JPS56157070 A JP S56157070A JP 6008080 A JP6008080 A JP 6008080A JP 6008080 A JP6008080 A JP 6008080A JP S56157070 A JPS56157070 A JP S56157070A
Authority
JP
Japan
Prior art keywords
layer
substrate
specific resistance
region
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6008080A
Other languages
Japanese (ja)
Inventor
Kimii Sumino
Hiroshi Kamijo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP6008080A priority Critical patent/JPS56157070A/en
Publication of JPS56157070A publication Critical patent/JPS56157070A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
    • H01L31/1185—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors of the shallow PN junction detector type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

PURPOSE:To decrease noises and stabilize the characteristic by a method wherein a layer which is the same conductive type as a substrate and smaller than the substrate in specific resistance is formed in a region other than a conductive type region having a different surface on one side. CONSTITUTION:A p layer 12 of below 100OMEGAcm specific resistance and of 1-10mum height is formed on the surface of a p type silicon substrate 1 with high specific resistance of over 10kOMEGAcm. An n<+> layer 2 is formd extending from a partial region on the p layer 12 of the substrate 1 provided with the p layer 12 to a prescribed depth. In addition, a p<+> layer 3, electrode metallic layers 4, 5 and silicon oxide layer 10 are formed. The surface of the p layer 11 with the high specific resistance on the substrate 1 is inactive because being covered with the p layer 12, and the increase and fluctuation of a leakage current are prevented enough due to the protection of the silicon oxide layer 10.
JP6008080A 1980-05-07 1980-05-07 Semiconductor radioactive rays detector Pending JPS56157070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6008080A JPS56157070A (en) 1980-05-07 1980-05-07 Semiconductor radioactive rays detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6008080A JPS56157070A (en) 1980-05-07 1980-05-07 Semiconductor radioactive rays detector

Publications (1)

Publication Number Publication Date
JPS56157070A true JPS56157070A (en) 1981-12-04

Family

ID=13131747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6008080A Pending JPS56157070A (en) 1980-05-07 1980-05-07 Semiconductor radioactive rays detector

Country Status (1)

Country Link
JP (1) JPS56157070A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553143A (en) * 1978-06-23 1980-01-10 Nippon Telegr & Teleph Corp <Ntt> Target for electron emission amplifier tube
US4879466A (en) * 1987-02-06 1989-11-07 Hitachi, Ltd. Semiconductor radiation detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553143A (en) * 1978-06-23 1980-01-10 Nippon Telegr & Teleph Corp <Ntt> Target for electron emission amplifier tube
JPS633469B2 (en) * 1978-06-23 1988-01-23 Nippon Telegraph & Telephone
US4879466A (en) * 1987-02-06 1989-11-07 Hitachi, Ltd. Semiconductor radiation detector

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