JPS56111284A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS56111284A
JPS56111284A JP1420280A JP1420280A JPS56111284A JP S56111284 A JPS56111284 A JP S56111284A JP 1420280 A JP1420280 A JP 1420280A JP 1420280 A JP1420280 A JP 1420280A JP S56111284 A JPS56111284 A JP S56111284A
Authority
JP
Japan
Prior art keywords
layer
active layer
etching
asp
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1420280A
Other languages
Japanese (ja)
Other versions
JPS6237838B2 (en
Inventor
Tsunao Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1420280A priority Critical patent/JPS56111284A/en
Publication of JPS56111284A publication Critical patent/JPS56111284A/en
Publication of JPS6237838B2 publication Critical patent/JPS6237838B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Abstract

PURPOSE:To obtain the laser having large mechanical strength by growing an (InGa) (AsP) active layer on an InP substrate having a surface (100), applying anisotropic etching thereof to form a resonating surface intruding into the side surface thereof, and covering the place with a layer having a large band interval. CONSTITUTION:An N type InP layer 11, the (InP) (AsP) active layer 12 and a P type InP layer 13 are laminated and grown on the InP substrate 10 having the surface (100), whereon a stripe-shaped mask of an SiO2 film 14 whose one side is turned toward the direction 100 is formed. Next, etching is applied by using mixed acid of H2SO4 and H2O2 and H2O and a surface (010) is made present by utilizing that the speed of etching is different according to the direction of crystal. In this way, etching is performed until it intrudes into the layer 11 located under the active layer 12 and thereby a laser mirror surface 16 with level difference is obtained on the side surface of the active layer 12. Thereafter on the side surface of the active layer 12 including the surface 16 the (InGa) (AsP) layer 18 having a larger band interval than that of the layer 12 is grown and thereby the mirror surface 16 is protected.
JP1420280A 1980-02-07 1980-02-07 Manufacture of semiconductor laser Granted JPS56111284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1420280A JPS56111284A (en) 1980-02-07 1980-02-07 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1420280A JPS56111284A (en) 1980-02-07 1980-02-07 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS56111284A true JPS56111284A (en) 1981-09-02
JPS6237838B2 JPS6237838B2 (en) 1987-08-14

Family

ID=11854519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1420280A Granted JPS56111284A (en) 1980-02-07 1980-02-07 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56111284A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045499A (en) * 1987-09-01 1991-09-03 Research Development Corporation Of Japan Method of manufacturing a distributed brass reflector type semiconductor laser
US5082799A (en) * 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US5222091A (en) * 1990-09-14 1993-06-22 Gte Laboratories Incorporated Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045499A (en) * 1987-09-01 1991-09-03 Research Development Corporation Of Japan Method of manufacturing a distributed brass reflector type semiconductor laser
US5082799A (en) * 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
WO1992005576A1 (en) * 1990-09-14 1992-04-02 Gte Laboratories Incorporated New structure and method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US5222091A (en) * 1990-09-14 1993-06-22 Gte Laboratories Incorporated Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor

Also Published As

Publication number Publication date
JPS6237838B2 (en) 1987-08-14

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