JPS58193654U - semiconductor laser - Google Patents
semiconductor laserInfo
- Publication number
- JPS58193654U JPS58193654U JP9198182U JP9198182U JPS58193654U JP S58193654 U JPS58193654 U JP S58193654U JP 9198182 U JP9198182 U JP 9198182U JP 9198182 U JP9198182 U JP 9198182U JP S58193654 U JPS58193654 U JP S58193654U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- semiconductor
- oscillation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図はストライプ形状のキャップ層の両側を実質的に
高抵抗となる埋込み層で囲繞してなる半導体レーザを示
す断面図、第２図は本考案の一実施例半導体レーザを示
す断面図、第３図Ａ〜Ｄは第２図半導体１−ザの製造工
程を示す工程別断面図である。
１・・・半導体基板、２・・・発振層、６・・・キャッ
プ層、７・・・埋込み層。FIG. 1 is a sectional view showing a semiconductor laser in which both sides of a striped cap layer are surrounded by buried layers having substantially high resistance; FIG. 2 is a sectional view showing a semiconductor laser according to an embodiment of the present invention; 3A to 3D are process-by-step sectional views showing the manufacturing process of the semiconductor 1--Z in FIG. 2. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Oscillation layer, 6... Cap layer, 7... Buried layer.
Claims (1)
層、該発振層上に積層されオーミック特性の良好な半導
体材料からなるストライプ形状のキャップ層、該キャッ
プ層の周囲に配された埋込み層からなり、上記埋込み層
は高熱伝導絶縁性の金属酸化膜からなることを特徴とす
る半導体レーザ。A semiconductor substrate, an oscillation layer laminated on the substrate to emit laser light, a striped cap layer laminated on the oscillation layer and made of a semiconductor material with good ohmic characteristics, and a buried layer arranged around the cap layer. A semiconductor laser characterized in that the buried layer is made of a highly thermally conductive insulating metal oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9198182U JPS58193654U (en) | 1982-06-18 | 1982-06-18 | semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9198182U JPS58193654U (en) | 1982-06-18 | 1982-06-18 | semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58193654U true JPS58193654U (en) | 1983-12-23 |
Family
ID=30100199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9198182U Pending JPS58193654U (en) | 1982-06-18 | 1982-06-18 | semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58193654U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54152878A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Structure of semiconductor laser element and its manufacture |
| JPS54152879A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Structure of semiconductor laser element and its manufacture |
| JPS55108941A (en) * | 1979-02-14 | 1980-08-21 | Toshiba Corp | Optical pickup unit |
-
1982
- 1982-06-18 JP JP9198182U patent/JPS58193654U/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54152878A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Structure of semiconductor laser element and its manufacture |
| JPS54152879A (en) * | 1978-05-23 | 1979-12-01 | Sharp Corp | Structure of semiconductor laser element and its manufacture |
| JPS55108941A (en) * | 1979-02-14 | 1980-08-21 | Toshiba Corp | Optical pickup unit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58193654U (en) | semiconductor laser | |
| JPS62102238U (en) | ||
| JPS5885798U (en) | electroluminescent element | |
| JPS59109164U (en) | semiconductor equipment | |
| JPS58143244U (en) | thermal head | |
| JPS58166670U (en) | Thin film electroluminescent device | |
| JPS6045452U (en) | Substrate for light emitting devices with reflective function | |
| JPS58142928U (en) | thick film capacitor | |
| JPS5931253U (en) | Photocoupler | |
| JPS59129197U (en) | Organic EL | |
| JPS58155857U (en) | semiconductor laser | |
| JPS5929057U (en) | Glass decorative body forming a solar cell | |
| JPS5935984U (en) | Thin film EL display | |
| JPS59101391U (en) | panel heater | |
| JPS60172354U (en) | semiconductor laser | |
| JPH01214086A (en) | Semiconductor laser | |
| JPS59107104U (en) | solid film resistance element | |
| JPS58129655U (en) | Semiconductor optical coupling device | |
| JPS6012297U (en) | thin film light emitting device | |
| JPS6138961U (en) | ZnSe light emitting device | |
| JPS6126296U (en) | EL element | |
| JPS5835295U (en) | electroluminescent lamp | |
| JPS59138255U (en) | Josephson joining equipment | |
| JPS59117149U (en) | Beam lead type semiconductor device | |
| JPS5817614U (en) | thin film magnetic head |