FR2316747B1 - - Google Patents
Info
- Publication number
- FR2316747B1 FR2316747B1 FR7618712A FR7618712A FR2316747B1 FR 2316747 B1 FR2316747 B1 FR 2316747B1 FR 7618712 A FR7618712 A FR 7618712A FR 7618712 A FR7618712 A FR 7618712A FR 2316747 B1 FR2316747 B1 FR 2316747B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50075902A JPS5811111B2 (en) | 1975-06-20 | 1975-06-20 | Manufacturing method of semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2316747A1 FR2316747A1 (en) | 1977-01-28 |
| FR2316747B1 true FR2316747B1 (en) | 1980-08-14 |
Family
ID=13589720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7618712A Granted FR2316747A1 (en) | 1975-06-20 | 1976-06-18 | SOLID STATE PHOTO-EMITTING DEVICE AND ITS MANUFACTURING PROCESS |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5811111B2 (en) |
| CA (1) | CA1077607A (en) |
| DE (1) | DE2627355C3 (en) |
| FR (1) | FR2316747A1 (en) |
| GB (1) | GB1543220A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4194933A (en) * | 1977-05-06 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method for fabricating junction lasers having lateral current confinement |
| US4169997A (en) * | 1977-05-06 | 1979-10-02 | Bell Telephone Laboratories, Incorporated | Lateral current confinement in junction lasers |
| DE3065856D1 (en) * | 1979-02-13 | 1984-01-19 | Fujitsu Ltd | A semiconductor light emitting device |
| JPS57136385A (en) * | 1981-02-16 | 1982-08-23 | Sanyo Electric Co Ltd | Manufacture of semiconductor laser |
| DE3105786A1 (en) * | 1981-02-17 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | MANUFACTURE OF LUMINESCENCE OR LASER DIODES WITH INTERNAL LIMITED LUMINAIRE AREA |
| JPS57160186A (en) * | 1981-03-27 | 1982-10-02 | Nec Corp | Manufacture of semiconductor laser |
| JPS60130880A (en) * | 1983-12-19 | 1985-07-12 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPS63248168A (en) * | 1987-04-02 | 1988-10-14 | Nec Corp | Hetero-junction bipolar transistor and manufacture thereof |
| JPS63248167A (en) * | 1987-04-02 | 1988-10-14 | Nec Corp | Manufacture of hetero-junction bipolar transistor |
| DE10008584A1 (en) * | 2000-02-24 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Semiconductor component for the emission of electromagnetic radiation and method for its production |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946878A (en) * | 1972-09-08 | 1974-05-07 |
-
1975
- 1975-06-20 JP JP50075902A patent/JPS5811111B2/en not_active Expired
-
1976
- 1976-06-11 GB GB24342/76A patent/GB1543220A/en not_active Expired
- 1976-06-17 CA CA255,114A patent/CA1077607A/en not_active Expired
- 1976-06-18 FR FR7618712A patent/FR2316747A1/en active Granted
- 1976-06-18 DE DE2627355A patent/DE2627355C3/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2627355B2 (en) | 1978-07-20 |
| DE2627355A1 (en) | 1976-12-23 |
| FR2316747A1 (en) | 1977-01-28 |
| JPS51151090A (en) | 1976-12-25 |
| DE2627355C3 (en) | 1979-03-22 |
| CA1077607A (en) | 1980-05-13 |
| GB1543220A (en) | 1979-03-28 |
| JPS5811111B2 (en) | 1983-03-01 |