JPS5472673A - Semicondcutor device - Google Patents

Semicondcutor device

Info

Publication number
JPS5472673A
JPS5472673A JP14051677A JP14051677A JPS5472673A JP S5472673 A JPS5472673 A JP S5472673A JP 14051677 A JP14051677 A JP 14051677A JP 14051677 A JP14051677 A JP 14051677A JP S5472673 A JPS5472673 A JP S5472673A
Authority
JP
Japan
Prior art keywords
layer
impurity
electrode
glass layer
short circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14051677A
Other languages
Japanese (ja)
Inventor
Masao Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14051677A priority Critical patent/JPS5472673A/en
Publication of JPS5472673A publication Critical patent/JPS5472673A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To forme the fine pattern and to prevent short circuit, by providing the conductive glass layer between the concavities of impurity area and the electrode.
CONSTITUTION: The impurity layer 43 is formed by opening a window to the insulation film 42 of the semiconductor substrate 41. Further, the conductive glass layer 47 such as tin oxide or indium oxide is provided on the layer 43. Next, the metal electrode 44 is formed. In this case, the specific resistivity is lowered with the addition of impurity for the tin oxide or indium oxide. Accordingly, the resistance between the electrode 44 and the impurity layer 43 is made small with the glass layer 47 and the both are separated, preventing the layer 41 from being invaded with metal and avoiding short circuit.
COPYRIGHT: (C)1979,JPO&Japio
JP14051677A 1977-11-21 1977-11-21 Semicondcutor device Pending JPS5472673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14051677A JPS5472673A (en) 1977-11-21 1977-11-21 Semicondcutor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14051677A JPS5472673A (en) 1977-11-21 1977-11-21 Semicondcutor device

Publications (1)

Publication Number Publication Date
JPS5472673A true JPS5472673A (en) 1979-06-11

Family

ID=15270462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14051677A Pending JPS5472673A (en) 1977-11-21 1977-11-21 Semicondcutor device

Country Status (1)

Country Link
JP (1) JPS5472673A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735370A (en) * 1980-08-12 1982-02-25 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735370A (en) * 1980-08-12 1982-02-25 Nec Corp Semiconductor device
JPS6346990B2 (en) * 1980-08-12 1988-09-20 Nippon Electric Co

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