JPS558012A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
JPS558012A
JPS558012A JP7940078A JP7940078A JPS558012A JP S558012 A JPS558012 A JP S558012A JP 7940078 A JP7940078 A JP 7940078A JP 7940078 A JP7940078 A JP 7940078A JP S558012 A JPS558012 A JP S558012A
Authority
JP
Japan
Prior art keywords
aluminum
compensation film
base plate
layer
electrode wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7940078A
Other languages
Japanese (ja)
Inventor
Akira Abiru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7940078A priority Critical patent/JPS558012A/en
Publication of JPS558012A publication Critical patent/JPS558012A/en
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To achieve low-resistance and positive connections of aluminum electrodes and aluminum wirings of Nos.1 and 2 layers by means of a contact compensation film to be formed in advance on a prescribed section on a base plate with a material which is easily able to make ohmic contact with aluminum.
CONSTITUTION: A contact compensation film 12 is formed on a base plate 1 by patterning of doped poly Si. After covering with PSG 13 and boring a hole 13A, aluminum is soldered to prepare an electrode-wiring 14 of No.1 layer. At this time, surface of the compensation film 12 is partly exposed again. And then, by covering with PSG 15 and providing an opening 15A, a part of the film 12 and a part of surface of the electrode wiring 14 are exposed. Even if insulating films 13 and 15 are of the same material, because of existence of the compensation film 12, the base plate 11 is not exposed and there is no remarkable difference between them. And then, an electrode wiring 16 of No.2 layer is connected to the electrode wiring 14 of No.1 layer by aluminum soldering and patterning through the compensation film 12. It is possible, in this mechanism, to achieve positive connection with low resistance and without increase in work processes.
COPYRIGHT: (C)1980,JPO&Japio
JP7940078A 1978-06-30 1978-06-30 Semi-conductor device Pending JPS558012A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7940078A JPS558012A (en) 1978-06-30 1978-06-30 Semi-conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7940078A JPS558012A (en) 1978-06-30 1978-06-30 Semi-conductor device

Publications (1)

Publication Number Publication Date
JPS558012A true JPS558012A (en) 1980-01-21

Family

ID=13688793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7940078A Pending JPS558012A (en) 1978-06-30 1978-06-30 Semi-conductor device

Country Status (1)

Country Link
JP (1) JPS558012A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5757709A (en) * 1980-09-24 1982-04-07 Mitsubishi Petrochem Co Ltd Propylene block copolymer
US4761913A (en) * 1984-08-06 1988-08-09 Ludvig Svensson International Bv Greenhouse screen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5757709A (en) * 1980-09-24 1982-04-07 Mitsubishi Petrochem Co Ltd Propylene block copolymer
US4761913A (en) * 1984-08-06 1988-08-09 Ludvig Svensson International Bv Greenhouse screen

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