JPS538078A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS538078A
JPS538078A JP3423377A JP3423377A JPS538078A JP S538078 A JPS538078 A JP S538078A JP 3423377 A JP3423377 A JP 3423377A JP 3423377 A JP3423377 A JP 3423377A JP S538078 A JPS538078 A JP S538078A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3423377A
Other languages
Japanese (ja)
Other versions
JPS5532230B2 (en
Inventor
Hiroshi Hara
Yoshiyuki Takeishi
Tai Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3423377A priority Critical patent/JPS538078A/en
Publication of JPS538078A publication Critical patent/JPS538078A/en
Publication of JPS5532230B2 publication Critical patent/JPS5532230B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To increase drain breakdown voltage by making a metal or semiconductor buried layer in a gate insulation film and capturing electrons or holes in this layer or at the level produced at the interface between said layer and the gate film.
COPYRIGHT: (C)1978,JPO&Japio
JP3423377A 1977-03-28 1977-03-28 Insulated gate type field effect transistor Granted JPS538078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3423377A JPS538078A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3423377A JPS538078A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1708771A Division JPS5124230B1 (en) 1971-03-25 1971-03-25

Publications (2)

Publication Number Publication Date
JPS538078A true JPS538078A (en) 1978-01-25
JPS5532230B2 JPS5532230B2 (en) 1980-08-23

Family

ID=12408422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3423377A Granted JPS538078A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS538078A (en)

Also Published As

Publication number Publication date
JPS5532230B2 (en) 1980-08-23

Similar Documents

Publication Publication Date Title
JPS54881A (en) Semiconductor device
JPS5366181A (en) High dielectric strength mis type transistor
JPS5222480A (en) Insulating gate field effect transistor
JPS5422781A (en) Insulator gate protective semiconductor device
JPS542679A (en) Nonvoltile semiconductor memory device
JPS5226177A (en) Semi-conductor unit
JPS5382179A (en) Field effect transistor
JPS52117586A (en) Semiconductor device
JPS52115663A (en) Semiconductor device
JPS53149771A (en) Mis-type semiconductor device and its manufacture
JPS538080A (en) Insulated gate type field effect transistor
JPS538078A (en) Insulated gate type field effect transistor
JPS52103974A (en) Semicondcutor integrated circuit device
JPS5346288A (en) Mis type semiconductor device
JPS5382277A (en) Schottky gate field effect transistor
JPS5384571A (en) Insulating gate type field effect transistor and its manufacture
JPS538079A (en) Insulated gate type field effect transistor
JPS5366179A (en) Semiconductor device
JPS53104183A (en) Junction gate-type field effect transistor
JPS5310983A (en) Insulated gate type field effect transistor
JPS53130991A (en) Semiconductor device
JPS52127078A (en) Semiconductor device
JPS5372577A (en) High dielectric strength field effect transistor
JPS535580A (en) Field effect type semiconductor device
JPS5367373A (en) Semiconductor device