JPS5655039A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5655039A JPS5655039A JP13208979A JP13208979A JPS5655039A JP S5655039 A JPS5655039 A JP S5655039A JP 13208979 A JP13208979 A JP 13208979A JP 13208979 A JP13208979 A JP 13208979A JP S5655039 A JPS5655039 A JP S5655039A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- conductive type
- ion
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000370 acceptor Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To simplify the manufacturing process of an element, by forming the same conductive type high-impurity-concentration layer by implanting ions into the bottom surface of a one-conductive type semiconductor substrate; then, forming a PN-junction layer by implanting the reverse conductive type impurity ions into the top surface of the substrate. CONSTITUTION:Impurites 3a such as boron, which are to become acceptors, are ion-implanted into the bottom surface 1b of a P type silicon substrate 1, the heat treating is performed in an N2 atmosphere, thereby a P<+> diffused layer 3 is formed. Then, impurities such as phosphorus, which are to become doners, are ion-implanted into the top surface 1a of the substrate 1, the diffusion is performed to the specified depth, thereby a PN-junction layer 5 is formed. Thereafter, an oxide film 6a is formed to protect the surface, a contact hole 7 is provided, and a metal layer is deposited by an evaporation or sputtering method. Finally, the patterning is performed on said metal layer, and an electrode 8 is formed. Since the ion implantation method is used, the oxide film can be formed in one step. This method can be applied to the elements such as solar cells and the like containing the PN-junction layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13208979A JPS5655039A (en) | 1979-10-12 | 1979-10-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13208979A JPS5655039A (en) | 1979-10-12 | 1979-10-12 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5655039A true JPS5655039A (en) | 1981-05-15 |
Family
ID=15073230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13208979A Pending JPS5655039A (en) | 1979-10-12 | 1979-10-12 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5655039A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927579A (en) * | 1982-08-04 | 1984-02-14 | Hoxan Corp | Manufacture of solar battery |
| JPS6184075A (en) * | 1984-09-18 | 1986-04-28 | イギリス国 | Photovoltaic solar cell |
| JPH02216874A (en) * | 1989-02-17 | 1990-08-29 | Hitachi Ltd | Silicon crystalline solar cell |
| JP2013016553A (en) * | 2011-06-30 | 2013-01-24 | Ulvac Japan Ltd | Manufacturing method of crystal solar cell |
| JP2013016552A (en) * | 2011-06-30 | 2013-01-24 | Ulvac Japan Ltd | Manufacturing method of crystal solar cell |
-
1979
- 1979-10-12 JP JP13208979A patent/JPS5655039A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927579A (en) * | 1982-08-04 | 1984-02-14 | Hoxan Corp | Manufacture of solar battery |
| JPS6184075A (en) * | 1984-09-18 | 1986-04-28 | イギリス国 | Photovoltaic solar cell |
| JPH02216874A (en) * | 1989-02-17 | 1990-08-29 | Hitachi Ltd | Silicon crystalline solar cell |
| JP2013016553A (en) * | 2011-06-30 | 2013-01-24 | Ulvac Japan Ltd | Manufacturing method of crystal solar cell |
| JP2013016552A (en) * | 2011-06-30 | 2013-01-24 | Ulvac Japan Ltd | Manufacturing method of crystal solar cell |
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