JPS5239380A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5239380A JPS5239380A JP50115762A JP11576275A JPS5239380A JP S5239380 A JPS5239380 A JP S5239380A JP 50115762 A JP50115762 A JP 50115762A JP 11576275 A JP11576275 A JP 11576275A JP S5239380 A JPS5239380 A JP S5239380A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- pnpn
- preparing
- region
- embedded layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent latch up phenomena existing in pnpn-type CMOS by preparing p<+> embedded layer on the bottom of P<-> region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50115762A JPS5239380A (en) | 1975-09-25 | 1975-09-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50115762A JPS5239380A (en) | 1975-09-25 | 1975-09-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5239380A true JPS5239380A (en) | 1977-03-26 |
Family
ID=14670403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50115762A Pending JPS5239380A (en) | 1975-09-25 | 1975-09-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5239380A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5493981A (en) * | 1978-01-09 | 1979-07-25 | Toshiba Corp | Semiconductor device |
JPS57188863A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Field effect type semiconductor device |
JPS57206063A (en) * | 1981-06-15 | 1982-12-17 | Toshiba Corp | Semiconductor substrate and manufacture therefor |
JPS58182863A (en) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | Semiconductor device |
JPS59132647A (en) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | Semiconductor device |
JPS60140748A (en) * | 1983-12-27 | 1985-07-25 | Rohm Co Ltd | Semiconductor device |
US5212440A (en) * | 1990-05-14 | 1993-05-18 | Micron Technology, Inc. | Quick response CMOS voltage reference circuit |
-
1975
- 1975-09-25 JP JP50115762A patent/JPS5239380A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5493981A (en) * | 1978-01-09 | 1979-07-25 | Toshiba Corp | Semiconductor device |
JPS57188863A (en) * | 1981-05-18 | 1982-11-19 | Hitachi Ltd | Field effect type semiconductor device |
JPS57206063A (en) * | 1981-06-15 | 1982-12-17 | Toshiba Corp | Semiconductor substrate and manufacture therefor |
JPS58182863A (en) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | Semiconductor device |
JPH0481341B2 (en) * | 1982-04-21 | 1992-12-22 | Hitachi Ltd | |
JPS59132647A (en) * | 1983-01-19 | 1984-07-30 | Toshiba Corp | Semiconductor device |
JPS60140748A (en) * | 1983-12-27 | 1985-07-25 | Rohm Co Ltd | Semiconductor device |
US5212440A (en) * | 1990-05-14 | 1993-05-18 | Micron Technology, Inc. | Quick response CMOS voltage reference circuit |
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