JPS5239380A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5239380A
JPS5239380A JP50115762A JP11576275A JPS5239380A JP S5239380 A JPS5239380 A JP S5239380A JP 50115762 A JP50115762 A JP 50115762A JP 11576275 A JP11576275 A JP 11576275A JP S5239380 A JPS5239380 A JP S5239380A
Authority
JP
Japan
Prior art keywords
semiconductor device
pnpn
preparing
region
embedded layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50115762A
Other languages
Japanese (ja)
Inventor
Toru Kuwabara
Mikio Kyomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50115762A priority Critical patent/JPS5239380A/en
Publication of JPS5239380A publication Critical patent/JPS5239380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent latch up phenomena existing in pnpn-type CMOS by preparing p<+> embedded layer on the bottom of P<-> region.
JP50115762A 1975-09-25 1975-09-25 Semiconductor device Pending JPS5239380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50115762A JPS5239380A (en) 1975-09-25 1975-09-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50115762A JPS5239380A (en) 1975-09-25 1975-09-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5239380A true JPS5239380A (en) 1977-03-26

Family

ID=14670403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50115762A Pending JPS5239380A (en) 1975-09-25 1975-09-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5239380A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS57188863A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Field effect type semiconductor device
JPS57206063A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor substrate and manufacture therefor
JPS58182863A (en) * 1982-04-21 1983-10-25 Hitachi Ltd Semiconductor device
JPS59132647A (en) * 1983-01-19 1984-07-30 Toshiba Corp Semiconductor device
JPS60140748A (en) * 1983-12-27 1985-07-25 Rohm Co Ltd Semiconductor device
US5212440A (en) * 1990-05-14 1993-05-18 Micron Technology, Inc. Quick response CMOS voltage reference circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS57188863A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Field effect type semiconductor device
JPS57206063A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor substrate and manufacture therefor
JPS58182863A (en) * 1982-04-21 1983-10-25 Hitachi Ltd Semiconductor device
JPH0481341B2 (en) * 1982-04-21 1992-12-22 Hitachi Ltd
JPS59132647A (en) * 1983-01-19 1984-07-30 Toshiba Corp Semiconductor device
JPS60140748A (en) * 1983-12-27 1985-07-25 Rohm Co Ltd Semiconductor device
US5212440A (en) * 1990-05-14 1993-05-18 Micron Technology, Inc. Quick response CMOS voltage reference circuit

Similar Documents

Publication Publication Date Title
JPS543479A (en) Semiconductor device and its manufacture
JPS51135373A (en) Semiconductor device
JPS5239380A (en) Semiconductor device
JPS52185A (en) Semiconductor
JPS51136234A (en) Solid state image device
JPS5242396A (en) Manufacturing method for liquid crystal display
JPS5220769A (en) Longitudinal semi-conductor unit
JPS5221781A (en) Semiconductor unit producing system
JPS51145267A (en) Manufacture of semiconductor device
JPS5257569A (en) Grinding liquid tank
JPS52186A (en) Semiconductor
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS52119067A (en) Semiconductor device
ZA725385B (en) Improvements in as team trap of the free float type
JPS5231671A (en) Sealing method of semiconductor device
JPS52179A (en) Method of fabricating semiconductor
JPS51132966A (en) Semiconductor device
JPS531545A (en) Solid electrooptical device
JPS533785A (en) Thin film solar battery
JPS5277568A (en) Drive circuit
JPS5410683A (en) Production of smiconductor device
JPS5272189A (en) Production of semiconductor device
JPS5230198A (en) Device for guiding guests
JPS51115776A (en) Glass-bond-type semiconductor element
JPS5249862A (en) Cover glass for watches