JPS57188863A - Field effect type semiconductor device - Google Patents

Field effect type semiconductor device

Info

Publication number
JPS57188863A
JPS57188863A JP56073522A JP7352281A JPS57188863A JP S57188863 A JPS57188863 A JP S57188863A JP 56073522 A JP56073522 A JP 56073522A JP 7352281 A JP7352281 A JP 7352281A JP S57188863 A JPS57188863 A JP S57188863A
Authority
JP
Japan
Prior art keywords
well region
type
region
well
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56073522A
Other languages
Japanese (ja)
Inventor
Yoshiaki Onishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56073522A priority Critical patent/JPS57188863A/en
Publication of JPS57188863A publication Critical patent/JPS57188863A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To stabilize well potential, to reduce the level of noise and to increase alpha-ray resistance by a device wherein between a well region and a substrate is formed a buried layer having the same conductivity type as that of the well region and higher density than that thereof, in the structure of a CMOS memory cell. CONSTITUTION:Between an N type substrate 1 and a P well region 2 of low impurity density and high resistance is formed a P<+> type buried layer 5 having higher density and lower resistance than that of the well region 2, right below an element region. Due to the presence of this P<+> type buried layer 5, impedance of the well region is lowered and there occurs no coupling between the N<+> type region 3 and the well region 2. As a result, well potential is stabilized, a level of noise in the memory cell section is reduced and penetration of alpha-ray can be prevented.
JP56073522A 1981-05-18 1981-05-18 Field effect type semiconductor device Pending JPS57188863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56073522A JPS57188863A (en) 1981-05-18 1981-05-18 Field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56073522A JPS57188863A (en) 1981-05-18 1981-05-18 Field effect type semiconductor device

Publications (1)

Publication Number Publication Date
JPS57188863A true JPS57188863A (en) 1982-11-19

Family

ID=13520648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56073522A Pending JPS57188863A (en) 1981-05-18 1981-05-18 Field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS57188863A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038866A (en) * 1983-07-14 1985-02-28 インテル・コーポレーシヨン Method of producing metal-oxidized film-semiconductor integrated circuit
JPS6115362A (en) * 1984-06-29 1986-01-23 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Dynamic ram cell
US4745453A (en) * 1983-06-30 1988-05-17 Kabushiki Kaisha Toshiba Semiconductor device
JPS63239861A (en) * 1987-03-27 1988-10-05 Hitachi Ltd Semiconductor integrated circuit device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239380A (en) * 1975-09-25 1977-03-26 Mitsubishi Electric Corp Semiconductor device
JPS55118666A (en) * 1979-03-05 1980-09-11 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239380A (en) * 1975-09-25 1977-03-26 Mitsubishi Electric Corp Semiconductor device
JPS55118666A (en) * 1979-03-05 1980-09-11 Nec Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745453A (en) * 1983-06-30 1988-05-17 Kabushiki Kaisha Toshiba Semiconductor device
JPS6038866A (en) * 1983-07-14 1985-02-28 インテル・コーポレーシヨン Method of producing metal-oxidized film-semiconductor integrated circuit
JPH0586863B2 (en) * 1983-07-14 1993-12-14 Intel Corp
JPS6115362A (en) * 1984-06-29 1986-01-23 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Dynamic ram cell
JPH0444428B2 (en) * 1984-06-29 1992-07-21 Intaanashonaru Bijinesu Mashiinzu Corp
JPS63239861A (en) * 1987-03-27 1988-10-05 Hitachi Ltd Semiconductor integrated circuit device

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