JPS56129367A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS56129367A
JPS56129367A JP3289380A JP3289380A JPS56129367A JP S56129367 A JPS56129367 A JP S56129367A JP 3289380 A JP3289380 A JP 3289380A JP 3289380 A JP3289380 A JP 3289380A JP S56129367 A JPS56129367 A JP S56129367A
Authority
JP
Japan
Prior art keywords
substrate
regions
electrons
region
reservoiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3289380A
Other languages
Japanese (ja)
Inventor
Tsutomu Yoshihara
Satoshi Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12371559&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS56129367(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3289380A priority Critical patent/JPS56129367A/en
Publication of JPS56129367A publication Critical patent/JPS56129367A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To prevent a mulfunction from being caused by incidence of radioactive rays by a method wherein an electric charge reservoiring region and bit line region having conductivities different from that of a substrate are surrounded on the peripheries by regions with density higher than the substrate and having the same conductivity as that of the substrate. CONSTITUTION:An N<+>-region 6 as the electric charge reservoiring region of a memory cell and an N<+>-region 7 as the bit line are surrounded on the peripheries by P<+>-regions 12, 13 in higher density than a P<-> type semiconductor substrate. Whereby electrons diffused from the substrate 1, out of electrons and holes pair created in the substrate 1 by radioactive rays of alpha-ray and the like, are recombined in the regions 12, 13 and not collected in the regions 6, 7. In addition, since a potential barrier against the electrons is formed on the interface of the substrate 1 and the regions 12, 13, the electrons smaller in energy out of the electrons diffused from the substrate 1 cannot pass through the potential barrier. Accordingly, the electrons are collected in the regions 6, 7 to cause the memory information to be inverted and the mulfunctions are prevented from being caused.
JP3289380A 1980-03-14 1980-03-14 Semiconductor integrated circuit Pending JPS56129367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3289380A JPS56129367A (en) 1980-03-14 1980-03-14 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3289380A JPS56129367A (en) 1980-03-14 1980-03-14 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS56129367A true JPS56129367A (en) 1981-10-09

Family

ID=12371559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3289380A Pending JPS56129367A (en) 1980-03-14 1980-03-14 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56129367A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188555A (en) * 1984-10-08 1986-05-06 Nec Corp Semiconductor memory cell
JPS61260670A (en) * 1985-05-14 1986-11-18 Mitsubishi Electric Corp Semiconductor memory device
JPS6260256A (en) * 1985-09-10 1987-03-16 Toshiba Corp Semiconductor memory device and manufacture of the same
JPS62140458A (en) * 1985-12-13 1987-06-24 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS62141756A (en) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp Semiconductor storage device
JPS62144352A (en) * 1985-12-18 1987-06-27 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS62144351A (en) * 1985-12-18 1987-06-27 Mitsubishi Electric Corp Manufacture of semiconductor memory
US4788580A (en) * 1985-11-22 1988-11-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory and method of manufacturing the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188555A (en) * 1984-10-08 1986-05-06 Nec Corp Semiconductor memory cell
JPS61260670A (en) * 1985-05-14 1986-11-18 Mitsubishi Electric Corp Semiconductor memory device
JPS6260256A (en) * 1985-09-10 1987-03-16 Toshiba Corp Semiconductor memory device and manufacture of the same
US4788580A (en) * 1985-11-22 1988-11-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory and method of manufacturing the same
US4910161A (en) * 1985-11-22 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
JPS62140458A (en) * 1985-12-13 1987-06-24 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS62141756A (en) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp Semiconductor storage device
JPS62144352A (en) * 1985-12-18 1987-06-27 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS62144351A (en) * 1985-12-18 1987-06-27 Mitsubishi Electric Corp Manufacture of semiconductor memory

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