JPS5376767A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5376767A
JPS5376767A JP15211576A JP15211576A JPS5376767A JP S5376767 A JPS5376767 A JP S5376767A JP 15211576 A JP15211576 A JP 15211576A JP 15211576 A JP15211576 A JP 15211576A JP S5376767 A JPS5376767 A JP S5376767A
Authority
JP
Japan
Prior art keywords
base region
polycrystalline
layer
providing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15211576A
Other languages
Japanese (ja)
Inventor
Katsuzo Uenishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP15211576A priority Critical patent/JPS5376767A/en
Publication of JPS5376767A publication Critical patent/JPS5376767A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To make possible the formation of a shallow base region and improve high frequency characteristics by forming a polycrystalline Si layer containing an impurity of a specified concentration on the base region in the position away from an an emitter layer, providing a connected base region shadower than the base region right under the emitter layer here, thereafter providing a base electrode on the polycrystalline Si layer.
COPYRIGHT: (C)1978,JPO&Japio
JP15211576A 1976-12-20 1976-12-20 Semiconductor device Pending JPS5376767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15211576A JPS5376767A (en) 1976-12-20 1976-12-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15211576A JPS5376767A (en) 1976-12-20 1976-12-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5376767A true JPS5376767A (en) 1978-07-07

Family

ID=15533375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15211576A Pending JPS5376767A (en) 1976-12-20 1976-12-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5376767A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037380A (en) * 1973-08-06 1975-04-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5037380A (en) * 1973-08-06 1975-04-08

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