JPS56124263A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56124263A
JPS56124263A JP2663880A JP2663880A JPS56124263A JP S56124263 A JPS56124263 A JP S56124263A JP 2663880 A JP2663880 A JP 2663880A JP 2663880 A JP2663880 A JP 2663880A JP S56124263 A JPS56124263 A JP S56124263A
Authority
JP
Japan
Prior art keywords
type
layer
electrodes
cathode
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2663880A
Other languages
Japanese (ja)
Other versions
JPS639670B2 (en
Inventor
Tokuo Watanabe
Masami Naito
Tsutomu Yao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2663880A priority Critical patent/JPS56124263A/en
Priority to DE3024939A priority patent/DE3024939C3/en
Priority to US06/164,946 priority patent/US4388635A/en
Publication of JPS56124263A publication Critical patent/JPS56124263A/en
Publication of JPS639670B2 publication Critical patent/JPS639670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Abstract

PURPOSE:To obtain a device provided with a highly reliable blocking capability, by providing collector electrodes in such a manner as to stick out from circumferences of both main surfaces of a semiconductor substrate whose p-n joint is exposed to the side surface, and also by covering side surfaces of the both electrodes with protective membranes. CONSTITUTION:A thick p type emitter layer 1 and a thin p type base layer 3 are formed on an n type Si 2, and an n type emitter layer 4 is selectively arranged on the layer 3. An anode 5, a cathode 6 and a control electrode 7 are provided in contact with respective main surface 101 and 102, and in a region 41, the p base 3 and the n emitter 4 are shortcircuited by the cathode 6. A side surface 103, where p-n joints J1 and J2 are exposed, is so processed as to become positive level. In contact with end sections 300 and 400 of respective main surfaces, ohmic electrodes 8 and 9 are provided in such a manner as to stick out from the circumferencial edge and form an annular configuration. As small amount of impurity iron is accumulated on surface of a semiconductor, it is possible to obtain an extremely stable device without allowing leak current to increase.
JP2663880A 1979-07-02 1980-03-05 Semiconductor device Granted JPS56124263A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2663880A JPS56124263A (en) 1980-03-05 1980-03-05 Semiconductor device
DE3024939A DE3024939C3 (en) 1979-07-02 1980-07-01 Semiconductor device
US06/164,946 US4388635A (en) 1979-07-02 1980-07-01 High breakdown voltage semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2663880A JPS56124263A (en) 1980-03-05 1980-03-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56124263A true JPS56124263A (en) 1981-09-29
JPS639670B2 JPS639670B2 (en) 1988-03-01

Family

ID=12198982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2663880A Granted JPS56124263A (en) 1979-07-02 1980-03-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56124263A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561977A (en) * 1983-03-08 1985-12-31 Nissan Motor Company, Limited Contractible fuel filter device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH076841U (en) * 1993-06-23 1995-01-31 株式会社三協精機製作所 Magnetic / IC dual card reader
US8872751B2 (en) 2009-03-26 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having interconnected transistors and electronic device including the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561977A (en) * 1983-03-08 1985-12-31 Nissan Motor Company, Limited Contractible fuel filter device

Also Published As

Publication number Publication date
JPS639670B2 (en) 1988-03-01

Similar Documents

Publication Publication Date Title
JPS5598858A (en) Gate turn-off thyristor
JPS56124263A (en) Semiconductor device
JPS55102267A (en) Semiconductor control element
JPS5739574A (en) Semiconductor device
JPS56124264A (en) Semiconductor device
JPS57181160A (en) Transistor
JPS56124265A (en) Semiconductor device
JPS57166078A (en) Semiconductor device
JPS567475A (en) Semiconductor device
JPS5494288A (en) 2 terminal reverse conducting thyristor
JPS5661175A (en) Thin-film solar cell
JPS5762540A (en) Semiconductor device
JPS57115878A (en) Solar battery
JPS5610968A (en) Semiconductor device
JPS56152266A (en) Photo-firing thyristor
JPS56103466A (en) Thyristor
JPS5425174A (en) Thyristor
JPS5779657A (en) Semiconductor device
JPS5790976A (en) Thyristor
JPS55113373A (en) Semiconductor device
JPS56161680A (en) Planar type vertical bipolar phototransistor
JPS54100671A (en) Transistor
JPS57155773A (en) High pressure-resistant planar transistor
JPS54143080A (en) Semiconductor device
JPS5724562A (en) Thyristor