JPS5610968A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5610968A
JPS5610968A JP8499679A JP8499679A JPS5610968A JP S5610968 A JPS5610968 A JP S5610968A JP 8499679 A JP8499679 A JP 8499679A JP 8499679 A JP8499679 A JP 8499679A JP S5610968 A JPS5610968 A JP S5610968A
Authority
JP
Japan
Prior art keywords
electrodes
layers
leakage current
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8499679A
Other languages
Japanese (ja)
Other versions
JPS612310B2 (en
Inventor
Tokuo Watanabe
Masami Naito
Tsutomu Yao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8499679A priority Critical patent/JPS5610968A/en
Priority to DE3024939A priority patent/DE3024939C3/en
Priority to US06/164,946 priority patent/US4388635A/en
Publication of JPS5610968A publication Critical patent/JPS5610968A/en
Publication of JPS612310B2 publication Critical patent/JPS612310B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Abstract

PURPOSE:To obtain a high withstand voltage SCR having a stable leakage current inhibiting characteristics by forming the same conducting type high density semiconductor layer as respective main surfaces thereof on the portion formed with current collecting electrodes. CONSTITUTION:A p-type base 3 and a p-type emitter 1 are exposed on both peripheral regions 300 of the SCR substrate 10. Aluminum is annularly evaporated on the peripheral regions 300, annular current collecting W electrodes 8, 9 are coated thereon, and heated to be bonded at a temperature higher than the melting point of aluminum. At this time p<+>-type layers 40 are formed on the bonded surfaces of the electrodes 8 and 9 respectively. Then, Si rubber material 20 is coated on both the electrodes 8 and 9 to protect the side surfaces of the substrate. According to this configuration the number of the lines of electric force collected at the base 3 is reduced due to the installation of the electrodes 8 to alleviate the surface electric field intensity on the end side surfaces 103 of the substrate 10. Since there is the layers 40 on the regions 300 directly under the electrodes 8, which layers 40 are not depleted nor inverted, the channel growth is inhibited by the layers 40 and does not reach the cathode 6. Accordingly, it can obtain low leakage current and stable leakage current inhibiting characteristics without increasing the leakage current.
JP8499679A 1979-07-02 1979-07-06 Semiconductor device Granted JPS5610968A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8499679A JPS5610968A (en) 1979-07-06 1979-07-06 Semiconductor device
DE3024939A DE3024939C3 (en) 1979-07-02 1980-07-01 Semiconductor device
US06/164,946 US4388635A (en) 1979-07-02 1980-07-01 High breakdown voltage semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8499679A JPS5610968A (en) 1979-07-06 1979-07-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5610968A true JPS5610968A (en) 1981-02-03
JPS612310B2 JPS612310B2 (en) 1986-01-23

Family

ID=13846233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8499679A Granted JPS5610968A (en) 1979-07-02 1979-07-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5610968A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10558144B2 (en) 2016-12-28 2020-02-11 Hewlett-Packard Development Company, L.P. Developing cartridge, developing apparatus and image forming apparatus having the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10558144B2 (en) 2016-12-28 2020-02-11 Hewlett-Packard Development Company, L.P. Developing cartridge, developing apparatus and image forming apparatus having the same

Also Published As

Publication number Publication date
JPS612310B2 (en) 1986-01-23

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