JPS56124265A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56124265A
JPS56124265A JP2664380A JP2664380A JPS56124265A JP S56124265 A JPS56124265 A JP S56124265A JP 2664380 A JP2664380 A JP 2664380A JP 2664380 A JP2664380 A JP 2664380A JP S56124265 A JPS56124265 A JP S56124265A
Authority
JP
Japan
Prior art keywords
layer
edge
electrode
cathode
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2664380A
Other languages
Japanese (ja)
Inventor
Tokuo Watanabe
Masami Naito
Tsutomu Yao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2664380A priority Critical patent/JPS56124265A/en
Priority to US06/164,946 priority patent/US4388635A/en
Priority to DE3024939A priority patent/DE3024939C3/en
Publication of JPS56124265A publication Critical patent/JPS56124265A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a highly reliable blocking capability, by providing an anode, sticking out from a circumferencial edge, on a main surface of a semiconductor substrate where a p-n joint is exposed to the side surface, connecting the electrode to a cathode on the other main surface, extending outside edge of a collector electrode, which is sticking out from this circumferential edge, toward the anode, and providing a protective membrane on the side surface. CONSTITUTION:With an n type Si 2 as a base, a pE layer 1, a pB layer 3 and an nE layer 4 are formed as usual. The pE layer is provided with an electrode 5 which sticks out from the circumferential edge, a control electrode 7 and a shortcircuit- emitter-structure cathode 6 are provided on the pE layer 3, a collector electrode 8 which has an ohmic connection with the cathode 6 is provided on a main surface edge section 300, and ths is made to stick out from the circmferencial edge to make the edge 8a culindrical. A side surface is covered by an Si rubber tupe protective membrane 200. In this mechanism, even when a high blocking voltage was impressed for a long period of time, amont of impurity to be accumulated on surface of a semiconductor layer is small, and therefore, it is possible to obtain a device of low leak current and stable blocking characteristic.
JP2664380A 1979-07-02 1980-03-05 Semiconductor device Pending JPS56124265A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2664380A JPS56124265A (en) 1980-03-05 1980-03-05 Semiconductor device
US06/164,946 US4388635A (en) 1979-07-02 1980-07-01 High breakdown voltage semiconductor device
DE3024939A DE3024939C3 (en) 1979-07-02 1980-07-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2664380A JPS56124265A (en) 1980-03-05 1980-03-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56124265A true JPS56124265A (en) 1981-09-29

Family

ID=12199123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2664380A Pending JPS56124265A (en) 1979-07-02 1980-03-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56124265A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018163599A1 (en) * 2017-03-08 2018-09-13 三菱電機株式会社 Semiconductor device, manufacturing method therefor, and semiconductor module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018163599A1 (en) * 2017-03-08 2018-09-13 三菱電機株式会社 Semiconductor device, manufacturing method therefor, and semiconductor module
JP6477975B2 (en) * 2017-03-08 2019-03-06 三菱電機株式会社 Semiconductor device, manufacturing method thereof, and semiconductor module
JPWO2018163599A1 (en) * 2017-03-08 2019-03-14 三菱電機株式会社 Semiconductor device, manufacturing method thereof, and semiconductor module
US11264318B2 (en) 2017-03-08 2022-03-01 Mitsubishi Electric Corporation Semiconductor device, method for manufacturing the same, and semiconductor module

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