JPS5779665A - Semiconductor controlled rectifier element - Google Patents
Semiconductor controlled rectifier elementInfo
- Publication number
- JPS5779665A JPS5779665A JP15546080A JP15546080A JPS5779665A JP S5779665 A JPS5779665 A JP S5779665A JP 15546080 A JP15546080 A JP 15546080A JP 15546080 A JP15546080 A JP 15546080A JP S5779665 A JPS5779665 A JP S5779665A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity concentration
- high impurity
- channel cutting
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To improve the variations of characteristics when a bias is applied for a long period at high temperature by providing a metal film connected electrically with a high impurity concentration layer on said high impurity concentration layer for channel cutting a planer type thyristor. CONSTITUTION:In a planer type thyristor having a pE layer 11, an nB layer 12, a pB layer 13, an nE layer 14, an insulating layer 15 and an n<+> layer 16 for channel cutting, the insulating film 15 on the high impurity concentration layer 16 for channel cutting is removed annularly, and on this removed part a metal film 17 is sticked and is subjected to patterning. Hereby, even if a leakage electric field is caused by an impression of a bias for a long period at high temperature, migration of electric charges can be arrested with reduced accumulated charges and deterioration of the characteristics can be prevented with improved reliability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15546080A JPS5779665A (en) | 1980-11-05 | 1980-11-05 | Semiconductor controlled rectifier element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15546080A JPS5779665A (en) | 1980-11-05 | 1980-11-05 | Semiconductor controlled rectifier element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5779665A true JPS5779665A (en) | 1982-05-18 |
Family
ID=15606526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15546080A Pending JPS5779665A (en) | 1980-11-05 | 1980-11-05 | Semiconductor controlled rectifier element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779665A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5122379A (en) * | 1974-08-19 | 1976-02-23 | Sony Corp |
-
1980
- 1980-11-05 JP JP15546080A patent/JPS5779665A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5122379A (en) * | 1974-08-19 | 1976-02-23 | Sony Corp |
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