JPS6469050A - Solid-state image sensor - Google Patents
Solid-state image sensorInfo
- Publication number
- JPS6469050A JPS6469050A JP62225407A JP22540787A JPS6469050A JP S6469050 A JPS6469050 A JP S6469050A JP 62225407 A JP62225407 A JP 62225407A JP 22540787 A JP22540787 A JP 22540787A JP S6469050 A JPS6469050 A JP S6469050A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- sensibility
- amount
- controlling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To lower photo-sensitivity, and to expand a dynamic range to the amount of light by forming an electrode for controlling sensibility onto a high resistance layer through a thin oxide film. CONSTITUTION:One part of an oxide insulating film 11 shaped onto an n<-> epitaxial layer 2 is thinned, on electrode 12 for controlling sensibility composed of polysilicon is formed onto the film 11, and control voltage VSCTL is applied to the electrode 12. In a solid-state image sensor using an SIT constituted in this manner, the epitaxial layer 2 in the lower section of the electrode 12 is depleted when control voltage VSCTL negative to voltage VD applied to a substrate 1 is applied to the electrode 12 for controlling sensibility during a light receiving period when the level of the amount of light is large. Consequently, holes in photo-charges formed in the epitaxial layer 2 collect to the depletion region, end electrons flow out to the biassed substrate (drain) 1. Accordingly, the characteristics of high sensibility are utilized as they are when the level of the amount of light is small, and sensibility is lowered and a dynamic range can be extended to the amount of light when the level of the amount of light is large.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62225407A JPS6469050A (en) | 1987-09-10 | 1987-09-10 | Solid-state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62225407A JPS6469050A (en) | 1987-09-10 | 1987-09-10 | Solid-state image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6469050A true JPS6469050A (en) | 1989-03-15 |
Family
ID=16828882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62225407A Pending JPS6469050A (en) | 1987-09-10 | 1987-09-10 | Solid-state image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6469050A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9888190B2 (en) | 2015-12-03 | 2018-02-06 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59108462A (en) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | Solid-state image pickup element having electrostatic induction transistor |
JPS61123172A (en) * | 1984-11-20 | 1986-06-11 | Olympus Optical Co Ltd | Solid-state image pickup device |
-
1987
- 1987-09-10 JP JP62225407A patent/JPS6469050A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59108462A (en) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | Solid-state image pickup element having electrostatic induction transistor |
JPS61123172A (en) * | 1984-11-20 | 1986-06-11 | Olympus Optical Co Ltd | Solid-state image pickup device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9888190B2 (en) | 2015-12-03 | 2018-02-06 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
US10165206B2 (en) | 2015-12-03 | 2018-12-25 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device with switchable modes |
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