JPS6469050A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPS6469050A
JPS6469050A JP62225407A JP22540787A JPS6469050A JP S6469050 A JPS6469050 A JP S6469050A JP 62225407 A JP62225407 A JP 62225407A JP 22540787 A JP22540787 A JP 22540787A JP S6469050 A JPS6469050 A JP S6469050A
Authority
JP
Japan
Prior art keywords
light
electrode
sensibility
amount
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225407A
Other languages
Japanese (ja)
Inventor
Junichi Nakamura
Hisaki Nakayama
Hironobu Aoki
Yuichi Gomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP62225407A priority Critical patent/JPS6469050A/en
Publication of JPS6469050A publication Critical patent/JPS6469050A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To lower photo-sensitivity, and to expand a dynamic range to the amount of light by forming an electrode for controlling sensibility onto a high resistance layer through a thin oxide film. CONSTITUTION:One part of an oxide insulating film 11 shaped onto an n<-> epitaxial layer 2 is thinned, on electrode 12 for controlling sensibility composed of polysilicon is formed onto the film 11, and control voltage VSCTL is applied to the electrode 12. In a solid-state image sensor using an SIT constituted in this manner, the epitaxial layer 2 in the lower section of the electrode 12 is depleted when control voltage VSCTL negative to voltage VD applied to a substrate 1 is applied to the electrode 12 for controlling sensibility during a light receiving period when the level of the amount of light is large. Consequently, holes in photo-charges formed in the epitaxial layer 2 collect to the depletion region, end electrons flow out to the biassed substrate (drain) 1. Accordingly, the characteristics of high sensibility are utilized as they are when the level of the amount of light is small, and sensibility is lowered and a dynamic range can be extended to the amount of light when the level of the amount of light is large.
JP62225407A 1987-09-10 1987-09-10 Solid-state image sensor Pending JPS6469050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225407A JPS6469050A (en) 1987-09-10 1987-09-10 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225407A JPS6469050A (en) 1987-09-10 1987-09-10 Solid-state image sensor

Publications (1)

Publication Number Publication Date
JPS6469050A true JPS6469050A (en) 1989-03-15

Family

ID=16828882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225407A Pending JPS6469050A (en) 1987-09-10 1987-09-10 Solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS6469050A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9888190B2 (en) 2015-12-03 2018-02-06 Panasonic Intellectual Property Management Co., Ltd. Imaging device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108462A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup element having electrostatic induction transistor
JPS61123172A (en) * 1984-11-20 1986-06-11 Olympus Optical Co Ltd Solid-state image pickup device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59108462A (en) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd Solid-state image pickup element having electrostatic induction transistor
JPS61123172A (en) * 1984-11-20 1986-06-11 Olympus Optical Co Ltd Solid-state image pickup device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9888190B2 (en) 2015-12-03 2018-02-06 Panasonic Intellectual Property Management Co., Ltd. Imaging device
US10165206B2 (en) 2015-12-03 2018-12-25 Panasonic Intellectual Property Management Co., Ltd. Imaging device with switchable modes

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