JPS575357A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS575357A JPS575357A JP8000780A JP8000780A JPS575357A JP S575357 A JPS575357 A JP S575357A JP 8000780 A JP8000780 A JP 8000780A JP 8000780 A JP8000780 A JP 8000780A JP S575357 A JPS575357 A JP S575357A
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- base region
- transistor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Abstract
PURPOSE:To highly integrate a semiconductor device without adding a precise lithographic step in a bipolar transistor by improving the base region, thereby preventing the C-E leakage. CONSTITUTION:A transistor is formed in an isolation region pattern 10 (in figure, respective rectangles indicate respective patterns of base region 13, base electrode 13', emitter retion 14, collector contact 15, and collector electrode 16.). A buried dioxidized silicon film 22, a P type base region 23, an N<+> type emitter region 24, an emitter electrode 24' are formed on an N type silicon substrate 21, and a transistor is thus formed. A part 30 of the base region 23 is deeply formed adjacent to the end of the emitter region in the periphery of the top of the apart surrounded at the side with the film 22. Thus, the distance between the regions 24 and 21 is sufficiently increased at the peripheral part, and the C-E leakage can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8000780A JPS575357A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8000780A JPS575357A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS575357A true JPS575357A (en) | 1982-01-12 |
Family
ID=13706265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8000780A Pending JPS575357A (en) | 1980-06-13 | 1980-06-13 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS575357A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114881A (en) * | 1975-04-02 | 1976-10-08 | Hitachi Ltd | Semiconductor device manufacturing method |
| JPS5218183A (en) * | 1975-08-01 | 1977-02-10 | Nec Corp | Semiconductor device |
| JPS5248978A (en) * | 1975-10-17 | 1977-04-19 | Hitachi Ltd | Process for production of semiconductor device |
| JPS5419675A (en) * | 1977-07-15 | 1979-02-14 | Hitachi Ltd | Production of semiconductor devices |
-
1980
- 1980-06-13 JP JP8000780A patent/JPS575357A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51114881A (en) * | 1975-04-02 | 1976-10-08 | Hitachi Ltd | Semiconductor device manufacturing method |
| JPS5218183A (en) * | 1975-08-01 | 1977-02-10 | Nec Corp | Semiconductor device |
| JPS5248978A (en) * | 1975-10-17 | 1977-04-19 | Hitachi Ltd | Process for production of semiconductor device |
| JPS5419675A (en) * | 1977-07-15 | 1979-02-14 | Hitachi Ltd | Production of semiconductor devices |
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