JPS5619659A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5619659A JPS5619659A JP9500179A JP9500179A JPS5619659A JP S5619659 A JPS5619659 A JP S5619659A JP 9500179 A JP9500179 A JP 9500179A JP 9500179 A JP9500179 A JP 9500179A JP S5619659 A JPS5619659 A JP S5619659A
- Authority
- JP
- Japan
- Prior art keywords
- region
- regions
- type
- layer
- buried regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To facilitate the formation of deep P-N junctions when buried regions are to be formed in a semiconductor substrate by a method wherein the kind of the impurity to be contained in the regions is restricted, and is heat-treated and is redistributed to increase the thickness of the buried regions. CONSTITUTION:Two N<+>-type regions 12A, 12B to form buried regions in them are formed by duffusion in a P-type Si substrate 10 using Sb, and a mask PM of photo resist layer exposing only the region 12A is provided. Then P ions PH are implanted into the region 12A, and the crystal defect is fixed by low temperatue annealing. It is dry etched, the mask PM is removed and the whole face is covered with an SiO2 film SO. The crystal defect is removed together with the film SO to obtain a faborable substrate by etching . An N<->-type layer 14 is made to grow epitaxially on the whole face, and the Sb in the regions 12A, 12B and the P in the region 12A are made to redistribute respectively to the upper part and to the lower part of the layer 14 to obtain buried regions 12, 13 being increased the thickness. Then the layer 14 is separated by a P<+>-type 17 into island regions containing respectively the region 12 and the region 13 to form a prescribed element region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9500179A JPS5619659A (en) | 1979-07-27 | 1979-07-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9500179A JPS5619659A (en) | 1979-07-27 | 1979-07-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5619659A true JPS5619659A (en) | 1981-02-24 |
Family
ID=14125616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9500179A Pending JPS5619659A (en) | 1979-07-27 | 1979-07-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5619659A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5045577A (en) * | 1973-08-24 | 1975-04-23 | ||
| JPS51116687A (en) * | 1975-04-07 | 1976-10-14 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS5238385A (en) * | 1975-09-23 | 1977-03-24 | Osamu Nakagawa | Accelerateefiring device for casttangling |
| JPS5338276A (en) * | 1976-09-20 | 1978-04-08 | Toshiba Corp | Semiconductor device |
-
1979
- 1979-07-27 JP JP9500179A patent/JPS5619659A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5045577A (en) * | 1973-08-24 | 1975-04-23 | ||
| JPS51116687A (en) * | 1975-04-07 | 1976-10-14 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS5238385A (en) * | 1975-09-23 | 1977-03-24 | Osamu Nakagawa | Accelerateefiring device for casttangling |
| JPS5338276A (en) * | 1976-09-20 | 1978-04-08 | Toshiba Corp | Semiconductor device |
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