JPS56160066A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS56160066A
JPS56160066A JP6445080A JP6445080A JPS56160066A JP S56160066 A JPS56160066 A JP S56160066A JP 6445080 A JP6445080 A JP 6445080A JP 6445080 A JP6445080 A JP 6445080A JP S56160066 A JPS56160066 A JP S56160066A
Authority
JP
Japan
Prior art keywords
layer
gto thyristor
electrode
turn
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6445080A
Other languages
Japanese (ja)
Inventor
Yasuo Kataoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP6445080A priority Critical patent/JPS56160066A/en
Publication of JPS56160066A publication Critical patent/JPS56160066A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To raise the capacity of interrupting a current by a method wherein an NPN transistor is formed in the same substrate as that of the GTO thyristor. CONSTITUTION:The NPN transistor composed of N1, P2, N3 layer is monolithically formed in the GTO thyristor substrate having P1, N1, P2, N2 layers and a buried gate layer P2<+>. The transistor unit is the N3-layer in which a collector electrode is made common with an anode electrode A of the GTO thyristor unit, the base being made the same as a P2-base layer and an emitter being formed in the manner similar to an N2-emitter of the GTO thyristor unit, and an emitter electrode E is made a turn-OFF gate electrode of the GTO thyristor unit. An N5-layer is formed so as to decrease ohmic resistances of the N1-layer and the anode electrode A. G1 is a turn- ON gate electrode of the GTO thyristor. Thereby, a turn-OFF gain is increased, and the maximum controllable current can be increased.
JP6445080A 1980-05-15 1980-05-15 Gate turn-off thyristor Pending JPS56160066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6445080A JPS56160066A (en) 1980-05-15 1980-05-15 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6445080A JPS56160066A (en) 1980-05-15 1980-05-15 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS56160066A true JPS56160066A (en) 1981-12-09

Family

ID=13258593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6445080A Pending JPS56160066A (en) 1980-05-15 1980-05-15 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS56160066A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1056248C (en) * 1992-09-12 2000-09-06 朱文有 Method for manufacturing electrostatic induction thyristor and device thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210085A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Semiconductor device
JPS52133549A (en) * 1976-05-04 1977-11-09 Hitachi Ltd Semiconductor swtich

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210085A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Semiconductor device
JPS52133549A (en) * 1976-05-04 1977-11-09 Hitachi Ltd Semiconductor swtich

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1056248C (en) * 1992-09-12 2000-09-06 朱文有 Method for manufacturing electrostatic induction thyristor and device thereof

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