JPS5428577A - Semiconductor nonvolatile memory device - Google Patents

Semiconductor nonvolatile memory device

Info

Publication number
JPS5428577A
JPS5428577A JP9384177A JP9384177A JPS5428577A JP S5428577 A JPS5428577 A JP S5428577A JP 9384177 A JP9384177 A JP 9384177A JP 9384177 A JP9384177 A JP 9384177A JP S5428577 A JPS5428577 A JP S5428577A
Authority
JP
Japan
Prior art keywords
nonvolatile memory
memory device
semiconductor nonvolatile
cmos
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9384177A
Other languages
Japanese (ja)
Inventor
Mikio Kyomasu
Yoshiharu Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9384177A priority Critical patent/JPS5428577A/en
Publication of JPS5428577A publication Critical patent/JPS5428577A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a nonvolatile memory which operates on a low voltage-current action with a small amount of the power consumption, by constituting the write/read control circuit of the MOS memory cell with CMOS.
JP9384177A 1977-08-04 1977-08-04 Semiconductor nonvolatile memory device Pending JPS5428577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9384177A JPS5428577A (en) 1977-08-04 1977-08-04 Semiconductor nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9384177A JPS5428577A (en) 1977-08-04 1977-08-04 Semiconductor nonvolatile memory device

Publications (1)

Publication Number Publication Date
JPS5428577A true JPS5428577A (en) 1979-03-03

Family

ID=14093612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9384177A Pending JPS5428577A (en) 1977-08-04 1977-08-04 Semiconductor nonvolatile memory device

Country Status (1)

Country Link
JP (1) JPS5428577A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153296A (en) * 1982-03-05 1983-09-12 Ricoh Co Ltd Memory driving circuit
US6759935B2 (en) 2000-01-12 2004-07-06 Tdk Corporation Coil-embedded dust core production process, and coil-embedded dust core formed by the production process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502480A (en) * 1973-05-08 1975-01-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502480A (en) * 1973-05-08 1975-01-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153296A (en) * 1982-03-05 1983-09-12 Ricoh Co Ltd Memory driving circuit
US6759935B2 (en) 2000-01-12 2004-07-06 Tdk Corporation Coil-embedded dust core production process, and coil-embedded dust core formed by the production process

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