JPS5379331A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5379331A
JPS5379331A JP15485276A JP15485276A JPS5379331A JP S5379331 A JPS5379331 A JP S5379331A JP 15485276 A JP15485276 A JP 15485276A JP 15485276 A JP15485276 A JP 15485276A JP S5379331 A JPS5379331 A JP S5379331A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
cell
preventing
reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15485276A
Other languages
Japanese (ja)
Inventor
Noriyuki Honma
Kunihiko Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15485276A priority Critical patent/JPS5379331A/en
Publication of JPS5379331A publication Critical patent/JPS5379331A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make a memory cell high-speed and low-power consumption by setting the cell load resistance to an intermediate value at a transition time between the information holding state and the selection state and preventing the reduction of cell potential.
JP15485276A 1976-12-24 1976-12-24 Semiconductor memory cell Pending JPS5379331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15485276A JPS5379331A (en) 1976-12-24 1976-12-24 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15485276A JPS5379331A (en) 1976-12-24 1976-12-24 Semiconductor memory cell

Publications (1)

Publication Number Publication Date
JPS5379331A true JPS5379331A (en) 1978-07-13

Family

ID=15593303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15485276A Pending JPS5379331A (en) 1976-12-24 1976-12-24 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS5379331A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854670A (en) * 1981-09-28 1983-03-31 Nec Corp Semiconductor device
JPS6117755U (en) * 1980-11-07 1986-02-01 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン semiconductor equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6117755U (en) * 1980-11-07 1986-02-01 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン semiconductor equipment
JPH0310681Y2 (en) * 1980-11-07 1991-03-15
JPS5854670A (en) * 1981-09-28 1983-03-31 Nec Corp Semiconductor device

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