JPS55125662A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS55125662A JPS55125662A JP3351879A JP3351879A JPS55125662A JP S55125662 A JPS55125662 A JP S55125662A JP 3351879 A JP3351879 A JP 3351879A JP 3351879 A JP3351879 A JP 3351879A JP S55125662 A JPS55125662 A JP S55125662A
- Authority
- JP
- Japan
- Prior art keywords
- cell
- capacitor
- memory cell
- charge condition
- capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the utilization factor of access by providing on a chip a capacitor, the capacity of which is greater than that of a capacitor in a memory cell, to detect the charge condition of the memory cell, and carrying out a refreshing operation in accordance with the charge condition of the memory cell. CONSTITUTION:A memory cell 11 having the same structure as a memory cell 10 is provided on the same chip. The capacity of a capacitor 5 is set to a small level. The cell 11 is refreshed by a sensor amplifier (S/A)8n+1 simultaneously with the cell 10 for matrix. The charge condition after refresh has been carried out is detected 12. When the charge condition is lower than a predetermined level, a refresh demand signal is output. The capacity Cref of a capacitor in the cell 11 is set to Cref<Ccel/m.1/k when the capacity Ccel of the capacitor in the cell 10, the number of line (m) and attenuation constant (k) are greater than one. The refresh cycle is determined by only variations in charge condition of the cell 11 irrespective of the condition of each cell 10 for matrix so that a necessary and sufficient interval can be provided. The interval can be extended several ten times that is a conventional IC. Accordingly, the utilization factor of access can be improved to a great extent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3351879A JPS55125662A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3351879A JPS55125662A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55125662A true JPS55125662A (en) | 1980-09-27 |
Family
ID=12388757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3351879A Pending JPS55125662A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125662A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60234298A (en) * | 1984-05-07 | 1985-11-20 | Hitachi Ltd | Semiconductor integrated circuit |
| JPH01302595A (en) * | 1988-05-30 | 1989-12-06 | Nec Ic Microcomput Syst Ltd | Semiconductor memory |
| US4982369A (en) * | 1986-11-07 | 1991-01-01 | Fujitsu Limited | Self-refresh semiconductor memory device responsive to a refresh request signal |
| JP2014524098A (en) * | 2011-06-30 | 2014-09-18 | シリコン イメージ，インコーポレイテッド | Mechanism for facilitating fine-grained self-refresh control of dynamic memory devices |
-
1979
- 1979-03-22 JP JP3351879A patent/JPS55125662A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60234298A (en) * | 1984-05-07 | 1985-11-20 | Hitachi Ltd | Semiconductor integrated circuit |
| US4982369A (en) * | 1986-11-07 | 1991-01-01 | Fujitsu Limited | Self-refresh semiconductor memory device responsive to a refresh request signal |
| JPH01302595A (en) * | 1988-05-30 | 1989-12-06 | Nec Ic Microcomput Syst Ltd | Semiconductor memory |
| JP2014524098A (en) * | 2011-06-30 | 2014-09-18 | シリコン イメージ，インコーポレイテッド | Mechanism for facilitating fine-grained self-refresh control of dynamic memory devices |
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