JPS5715286A - Memory device - Google Patents
Memory deviceInfo
- Publication number
- JPS5715286A JPS5715286A JP8775080A JP8775080A JPS5715286A JP S5715286 A JPS5715286 A JP S5715286A JP 8775080 A JP8775080 A JP 8775080A JP 8775080 A JP8775080 A JP 8775080A JP S5715286 A JPS5715286 A JP S5715286A
- Authority
- JP
- Japan
- Prior art keywords
- refreshing
- data
- same
- cycle
- rams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To eliminate operation delay due to confliction with refreshing operation while using a dynamic RAM as a storing element, by reading out data from either one of a couple of dynamic RAMs stored with the same data which is not in a refreshing cycle. CONSTITUTION:A couple of dynamic RAMs 1 and 2 whose storage contents are the same and a refreshment control circuit 3 which refreshes them through multiplexers 7 and 8 with a refreshing-cycle difference are provided. Then, the same data is written in the same addresses of the RAMs 1 and 2 and from one RAM which is not in a refreshing cycle, the data is read out through a multiplexer 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8775080A JPS5715286A (en) | 1980-06-30 | 1980-06-30 | Memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8775080A JPS5715286A (en) | 1980-06-30 | 1980-06-30 | Memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5715286A true JPS5715286A (en) | 1982-01-26 |
Family
ID=13923605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8775080A Pending JPS5715286A (en) | 1980-06-30 | 1980-06-30 | Memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5715286A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716459A (en) * | 1985-01-25 | 1987-12-29 | Nippon Kokan Kabushiki Kaisha | Fatigue crack position detection apparatus |
US6324113B1 (en) | 1999-09-22 | 2001-11-27 | Fujitsu Limited | Semiconductor integrated circuit and method of controlling same |
JP2004507856A (en) * | 2000-08-17 | 2004-03-11 | マイクロン・テクノロジー・インコーポレーテッド | Method and system for hiding refresh of dynamic random access memory |
JP2012512496A (en) * | 2009-05-25 | 2012-05-31 | ソンゼ イ, | Apparatus and method for implementing SRAM output characteristics in DRAM |
-
1980
- 1980-06-30 JP JP8775080A patent/JPS5715286A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716459A (en) * | 1985-01-25 | 1987-12-29 | Nippon Kokan Kabushiki Kaisha | Fatigue crack position detection apparatus |
US6324113B1 (en) | 1999-09-22 | 2001-11-27 | Fujitsu Limited | Semiconductor integrated circuit and method of controlling same |
JP2004507856A (en) * | 2000-08-17 | 2004-03-11 | マイクロン・テクノロジー・インコーポレーテッド | Method and system for hiding refresh of dynamic random access memory |
JP2012512496A (en) * | 2009-05-25 | 2012-05-31 | ソンゼ イ, | Apparatus and method for implementing SRAM output characteristics in DRAM |
EP2437267A4 (en) * | 2009-05-25 | 2013-01-23 | Seong Jae Lee | Device and method for achieving sram output characteristics from drams |
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