JPS5264236A - Dynamic memory unit - Google Patents
Dynamic memory unitInfo
- Publication number
- JPS5264236A JPS5264236A JP50139987A JP13998775A JPS5264236A JP S5264236 A JPS5264236 A JP S5264236A JP 50139987 A JP50139987 A JP 50139987A JP 13998775 A JP13998775 A JP 13998775A JP S5264236 A JPS5264236 A JP S5264236A
- Authority
- JP
- Japan
- Prior art keywords
- memory unit
- dynamic memory
- memory cell
- betweem
- pairs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:A good balance is secured betweem memory cell which is selected in pairs and dummy cell. In this way, the detection sensitivity of dynamic memory unit is increased, and the capacity of memory cell capacitor is reduced, at the same time increasing integration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50139987A JPS5264236A (en) | 1975-11-21 | 1975-11-21 | Dynamic memory unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50139987A JPS5264236A (en) | 1975-11-21 | 1975-11-21 | Dynamic memory unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5264236A true JPS5264236A (en) | 1977-05-27 |
Family
ID=15258292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50139987A Pending JPS5264236A (en) | 1975-11-21 | 1975-11-21 | Dynamic memory unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5264236A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750387A (en) * | 1980-09-10 | 1982-03-24 | Nec Corp | Memory device |
JPH02276088A (en) * | 1989-01-18 | 1990-11-09 | Mitsubishi Electric Corp | Sense amplifier driving device and electrostatic capacity element for semiconductor storage device |
-
1975
- 1975-11-21 JP JP50139987A patent/JPS5264236A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750387A (en) * | 1980-09-10 | 1982-03-24 | Nec Corp | Memory device |
JPS636952B2 (en) * | 1980-09-10 | 1988-02-13 | Nippon Electric Co | |
JPH02276088A (en) * | 1989-01-18 | 1990-11-09 | Mitsubishi Electric Corp | Sense amplifier driving device and electrostatic capacity element for semiconductor storage device |
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