JPS57186290A - Reproducer of dynamic ram - Google Patents
Reproducer of dynamic ramInfo
- Publication number
- JPS57186290A JPS57186290A JP56070937A JP7093781A JPS57186290A JP S57186290 A JPS57186290 A JP S57186290A JP 56070937 A JP56070937 A JP 56070937A JP 7093781 A JP7093781 A JP 7093781A JP S57186290 A JPS57186290 A JP S57186290A
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- dynamic ram
- condenser
- drain
- reproducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
Abstract
PURPOSE:To eliminate necessity of a dummy cell (dummy memory cell), by using a C-MOS transistor. CONSTITUTION:An invertor-couple of C-MOS configuration is made from P type transistors 17a and 17b and N type transistors 18a abd 18b, and they are connected under a feedback condition. Then, a dynamic RAM is configured with six transistors by adding two more transistors Tr16 and Tr14 which open and close the power supply, to the four transistors. A condenser 19 containing a parasitic capacity is effectively used. Each drain of the inverter pair is configured in such a way that they have bit lines 2a and 2b having plural memory cells composed of transistors and condensers as loads. The condenser of large capacitance 19 is added to each drain.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56070937A JPS57186290A (en) | 1981-05-12 | 1981-05-12 | Reproducer of dynamic ram |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56070937A JPS57186290A (en) | 1981-05-12 | 1981-05-12 | Reproducer of dynamic ram |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1294635A Division JPH02161687A (en) | 1989-11-13 | 1989-11-13 | Regenerator for dynamic ram |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57186290A true JPS57186290A (en) | 1982-11-16 |
JPH0235400B2 JPH0235400B2 (en) | 1990-08-09 |
Family
ID=13445907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56070937A Granted JPS57186290A (en) | 1981-05-12 | 1981-05-12 | Reproducer of dynamic ram |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57186290A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4860255A (en) * | 1981-05-13 | 1989-08-22 | Hitachi, Ltd. | Semiconductor memory |
JPH023155A (en) * | 1988-05-13 | 1990-01-08 | Hitachi Ltd | Semiconductor memory device |
JP2006331629A (en) * | 2005-05-23 | 2006-12-07 | Stmicroelectronics Crolles 2 Sas | Detection amplifier for dram, control method thereof, and dram |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04117696A (en) * | 1990-09-06 | 1992-04-17 | Toshiba Corp | Semiconductor memory device |
JPH04184791A (en) * | 1990-11-20 | 1992-07-01 | Nec Corp | Semiconductor memory |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52113131A (en) * | 1975-09-08 | 1977-09-22 | Toko Inc | Sensing amplifier for one transistor |
JPS5694574A (en) * | 1979-12-27 | 1981-07-31 | Toshiba Corp | Complementary mos sense circuit |
-
1981
- 1981-05-12 JP JP56070937A patent/JPS57186290A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52113131A (en) * | 1975-09-08 | 1977-09-22 | Toko Inc | Sensing amplifier for one transistor |
JPS5694574A (en) * | 1979-12-27 | 1981-07-31 | Toshiba Corp | Complementary mos sense circuit |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4860255A (en) * | 1981-05-13 | 1989-08-22 | Hitachi, Ltd. | Semiconductor memory |
JPH023155A (en) * | 1988-05-13 | 1990-01-08 | Hitachi Ltd | Semiconductor memory device |
JPH0456397B2 (en) * | 1988-05-13 | 1992-09-08 | Hitachi Ltd | |
JP2006331629A (en) * | 2005-05-23 | 2006-12-07 | Stmicroelectronics Crolles 2 Sas | Detection amplifier for dram, control method thereof, and dram |
Also Published As
Publication number | Publication date |
---|---|
JPH0235400B2 (en) | 1990-08-09 |
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