JPS57186290A - Reproducer of dynamic ram - Google Patents

Reproducer of dynamic ram

Info

Publication number
JPS57186290A
JPS57186290A JP56070937A JP7093781A JPS57186290A JP S57186290 A JPS57186290 A JP S57186290A JP 56070937 A JP56070937 A JP 56070937A JP 7093781 A JP7093781 A JP 7093781A JP S57186290 A JPS57186290 A JP S57186290A
Authority
JP
Japan
Prior art keywords
transistors
dynamic ram
condenser
drain
reproducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56070937A
Other languages
Japanese (ja)
Other versions
JPH0235400B2 (en
Inventor
Yoshikiyo Futagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epuson Kk
Seiko Epson Corp
Suwa Seikosha KK
Epson Corp
Original Assignee
Epuson Kk
Seiko Epson Corp
Suwa Seikosha KK
Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epuson Kk, Seiko Epson Corp, Suwa Seikosha KK, Epson Corp filed Critical Epuson Kk
Priority to JP56070937A priority Critical patent/JPS57186290A/en
Publication of JPS57186290A publication Critical patent/JPS57186290A/en
Publication of JPH0235400B2 publication Critical patent/JPH0235400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4099Dummy cell treatment; Reference voltage generators

Abstract

PURPOSE:To eliminate necessity of a dummy cell (dummy memory cell), by using a C-MOS transistor. CONSTITUTION:An invertor-couple of C-MOS configuration is made from P type transistors 17a and 17b and N type transistors 18a abd 18b, and they are connected under a feedback condition. Then, a dynamic RAM is configured with six transistors by adding two more transistors Tr16 and Tr14 which open and close the power supply, to the four transistors. A condenser 19 containing a parasitic capacity is effectively used. Each drain of the inverter pair is configured in such a way that they have bit lines 2a and 2b having plural memory cells composed of transistors and condensers as loads. The condenser of large capacitance 19 is added to each drain.
JP56070937A 1981-05-12 1981-05-12 Reproducer of dynamic ram Granted JPS57186290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56070937A JPS57186290A (en) 1981-05-12 1981-05-12 Reproducer of dynamic ram

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070937A JPS57186290A (en) 1981-05-12 1981-05-12 Reproducer of dynamic ram

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1294635A Division JPH02161687A (en) 1989-11-13 1989-11-13 Regenerator for dynamic ram

Publications (2)

Publication Number Publication Date
JPS57186290A true JPS57186290A (en) 1982-11-16
JPH0235400B2 JPH0235400B2 (en) 1990-08-09

Family

ID=13445907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56070937A Granted JPS57186290A (en) 1981-05-12 1981-05-12 Reproducer of dynamic ram

Country Status (1)

Country Link
JP (1) JPS57186290A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860255A (en) * 1981-05-13 1989-08-22 Hitachi, Ltd. Semiconductor memory
JPH023155A (en) * 1988-05-13 1990-01-08 Hitachi Ltd Semiconductor memory device
JP2006331629A (en) * 2005-05-23 2006-12-07 Stmicroelectronics Crolles 2 Sas Detection amplifier for dram, control method thereof, and dram

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04117696A (en) * 1990-09-06 1992-04-17 Toshiba Corp Semiconductor memory device
JPH04184791A (en) * 1990-11-20 1992-07-01 Nec Corp Semiconductor memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
JPS5694574A (en) * 1979-12-27 1981-07-31 Toshiba Corp Complementary mos sense circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
JPS5694574A (en) * 1979-12-27 1981-07-31 Toshiba Corp Complementary mos sense circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860255A (en) * 1981-05-13 1989-08-22 Hitachi, Ltd. Semiconductor memory
JPH023155A (en) * 1988-05-13 1990-01-08 Hitachi Ltd Semiconductor memory device
JPH0456397B2 (en) * 1988-05-13 1992-09-08 Hitachi Ltd
JP2006331629A (en) * 2005-05-23 2006-12-07 Stmicroelectronics Crolles 2 Sas Detection amplifier for dram, control method thereof, and dram

Also Published As

Publication number Publication date
JPH0235400B2 (en) 1990-08-09

Similar Documents

Publication Publication Date Title
RU95107653A (en) Semiconductor storage device with capacitors formed above and under storage location transistor and its manufacturing process
JPS5771574A (en) Siemconductor memory circuit
JPS57111061A (en) Semiconductor memory unit
KR900006318B1 (en) Gate array intergrated circuit device and method thereof for various bit-word construstions
JPS56108259A (en) Semiconductor memory device
EP0118878A3 (en) Semiconductor memory device
EP0107387A3 (en) Semiconductor memory device
ES465088A1 (en) Junction field effect transistor random access memory
KR840004292A (en) MOS random access memory
JPS5661088A (en) Semiconductor memory device
JPS57186290A (en) Reproducer of dynamic ram
JPS5782279A (en) Semiconductor storage device
EP0050772A3 (en) Jfet dynamic memory
JPS5693178A (en) Semiconductor memory device
DE3778388D1 (en) SEMICONDUCTOR STORAGE DEVICE.
JPS56130887A (en) Semiconductor memory device
JPS54148340A (en) Memory circuit
JPS5782288A (en) Dynamic memory
JPS5782286A (en) Semiconductor storage device
JPS55160392A (en) Semiconductor memory
JPS5650630A (en) Semiconductor integrated circuit
GB1530056A (en) Semiconductor data storage matrices
JPS56148790A (en) Semiconductor memory
JPS5611687A (en) Semiconductor memory unit
JPS5613590A (en) Mos dynamic memory circuit