JPS5641590A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5641590A
JPS5641590A JP11647979A JP11647979A JPS5641590A JP S5641590 A JPS5641590 A JP S5641590A JP 11647979 A JP11647979 A JP 11647979A JP 11647979 A JP11647979 A JP 11647979A JP S5641590 A JPS5641590 A JP S5641590A
Authority
JP
Japan
Prior art keywords
potential
line
lines
cell
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11647979A
Other languages
Japanese (ja)
Inventor
Toshio Takeshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11647979A priority Critical patent/JPS5641590A/en
Publication of JPS5641590A publication Critical patent/JPS5641590A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To improve the efficiency of utilization of a memory by increasing the potential difference between pieces of information H and L by using a capacity of potential dependency for cell capacity and by driving the capacitor via a storage word line. CONSTITUTION:Bit line Bi and word line W are taken as a row and column respectively and memory cells are provided near respective intersections between rows and columns to form cell matrixes 2 and 2' provided with parallel storage word lines Z pairing with word lines. Further, this unit is equipped with sense amplifiers 3 and 30 as many as rows, X decoder 10 selecting a pair of lines W and Z, input- output circuits 5 and 50 for lines B, and Y decoder 4. Then, the cell has cell capacity Cso8 depending upon selection gate GT and MOSFET and Cso8 varies in value with the voltage difference between its gate electrode and source-drain electrode; and the potential of line Z rises high when line W is at the low potential and falls low when at the high potential.
JP11647979A 1979-09-11 1979-09-11 Semiconductor memory unit Pending JPS5641590A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11647979A JPS5641590A (en) 1979-09-11 1979-09-11 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11647979A JPS5641590A (en) 1979-09-11 1979-09-11 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS5641590A true JPS5641590A (en) 1981-04-18

Family

ID=14688118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11647979A Pending JPS5641590A (en) 1979-09-11 1979-09-11 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5641590A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177495A (en) * 1984-02-22 1985-09-11 Nec Corp Semiconductor memory device
JPS6258491A (en) * 1985-09-06 1987-03-14 Nec Corp Semiconductor memory cell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS525225A (en) * 1975-07-02 1977-01-14 Fujitsu Ltd Semi-conductor memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS525225A (en) * 1975-07-02 1977-01-14 Fujitsu Ltd Semi-conductor memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177495A (en) * 1984-02-22 1985-09-11 Nec Corp Semiconductor memory device
JPS6258491A (en) * 1985-09-06 1987-03-14 Nec Corp Semiconductor memory cell

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