JPS5661082A - Two level memory integrated circuit - Google Patents

Two level memory integrated circuit

Info

Publication number
JPS5661082A
JPS5661082A JP13610379A JP13610379A JPS5661082A JP S5661082 A JPS5661082 A JP S5661082A JP 13610379 A JP13610379 A JP 13610379A JP 13610379 A JP13610379 A JP 13610379A JP S5661082 A JPS5661082 A JP S5661082A
Authority
JP
Japan
Prior art keywords
memory
bit
memories
integrated circuit
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13610379A
Other languages
Japanese (ja)
Inventor
Masahiro Mikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13610379A priority Critical patent/JPS5661082A/en
Publication of JPS5661082A publication Critical patent/JPS5661082A/en
Pending legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Memory System Of A Hierarchy Structure (AREA)

Abstract

PURPOSE: To realize a large capacity high speed semiconductor memory, by hierarchy of memory with chip level.
CONSTITUTION: A two level memory integrated circuit 25 provides a main memory 11 which is an integration of memory cells located in matrix, cash memories 13, 14 constituted with cells 1-bit or more corresponding to each bit line of the main memory, and bit bus switch 46 controlling the connection of bit lines of memories 11, 13 and 14, and the address to the memory 11 is controlled with a control circuit 7. Further, by performing data transfer among memories 11, 12 and 14 in parallel, a greater bit ratio with the logic of a simple cash control is obtained, and the integration of memory and optimized speed in chip level can be obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP13610379A 1979-10-22 1979-10-22 Two level memory integrated circuit Pending JPS5661082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13610379A JPS5661082A (en) 1979-10-22 1979-10-22 Two level memory integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13610379A JPS5661082A (en) 1979-10-22 1979-10-22 Two level memory integrated circuit

Publications (1)

Publication Number Publication Date
JPS5661082A true JPS5661082A (en) 1981-05-26

Family

ID=15167339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13610379A Pending JPS5661082A (en) 1979-10-22 1979-10-22 Two level memory integrated circuit

Country Status (1)

Country Link
JP (1) JPS5661082A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62137795A (en) * 1985-12-09 1987-06-20 Mitsubishi Electric Corp Semiconductor storage device
JPS6439691A (en) * 1987-08-05 1989-02-09 Mitsubishi Electric Corp Semiconductor memory device for handy cache system
JPS6484495A (en) * 1987-09-26 1989-03-29 Mitsubishi Electric Corp Semiconductor memory
JPH01122094A (en) * 1987-11-05 1989-05-15 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH01124194A (en) * 1987-11-06 1989-05-17 Mitsubishi Electric Corp Semiconductor memory device
JPH01124193A (en) * 1987-11-06 1989-05-17 Mitsubishi Electric Corp Semiconductor memory device
JPH01138693A (en) * 1987-11-25 1989-05-31 Mitsubishi Electric Corp Semiconductor memory device
JPH01146187A (en) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp Semiconductor memory device built-in cache memory
JPH01159891A (en) * 1987-12-17 1989-06-22 Mitsubishi Electric Corp Semiconductor memory
JPH0212687A (en) * 1988-03-31 1990-01-17 Texas Instr Inc <Ti> Processing sysem using multi-line cache dram
JPH07153261A (en) * 1994-09-13 1995-06-16 Mitsubishi Electric Corp Semiconductor storage
JPH07153262A (en) * 1994-09-13 1995-06-16 Mitsubishi Electric Corp Semiconductor storage
JPH07153260A (en) * 1994-08-31 1995-06-16 Mitsubishi Electric Corp Semiconductor storage
US6710991B2 (en) 2002-05-28 2004-03-23 Oki Electric Industry Co., Ltd. Electrostatic-breakdown-preventive and protective circuit for semiconductor-device
US6940739B2 (en) 1995-08-31 2005-09-06 Hitachi, Ltd. Semiconductor memory device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62137795A (en) * 1985-12-09 1987-06-20 Mitsubishi Electric Corp Semiconductor storage device
JPS6439691A (en) * 1987-08-05 1989-02-09 Mitsubishi Electric Corp Semiconductor memory device for handy cache system
JPS6484495A (en) * 1987-09-26 1989-03-29 Mitsubishi Electric Corp Semiconductor memory
JPH01122094A (en) * 1987-11-05 1989-05-15 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH01124194A (en) * 1987-11-06 1989-05-17 Mitsubishi Electric Corp Semiconductor memory device
JPH01124193A (en) * 1987-11-06 1989-05-17 Mitsubishi Electric Corp Semiconductor memory device
JPH01138693A (en) * 1987-11-25 1989-05-31 Mitsubishi Electric Corp Semiconductor memory device
JPH01146187A (en) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp Semiconductor memory device built-in cache memory
JPH01159891A (en) * 1987-12-17 1989-06-22 Mitsubishi Electric Corp Semiconductor memory
JPH0212687A (en) * 1988-03-31 1990-01-17 Texas Instr Inc <Ti> Processing sysem using multi-line cache dram
JPH07153260A (en) * 1994-08-31 1995-06-16 Mitsubishi Electric Corp Semiconductor storage
JPH07153261A (en) * 1994-09-13 1995-06-16 Mitsubishi Electric Corp Semiconductor storage
JPH07153262A (en) * 1994-09-13 1995-06-16 Mitsubishi Electric Corp Semiconductor storage
US6940739B2 (en) 1995-08-31 2005-09-06 Hitachi, Ltd. Semiconductor memory device
US6710991B2 (en) 2002-05-28 2004-03-23 Oki Electric Industry Co., Ltd. Electrostatic-breakdown-preventive and protective circuit for semiconductor-device

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