JPS53123685A - Binary memory device - Google Patents

Binary memory device

Info

Publication number
JPS53123685A
JPS53123685A JP3886077A JP3886077A JPS53123685A JP S53123685 A JPS53123685 A JP S53123685A JP 3886077 A JP3886077 A JP 3886077A JP 3886077 A JP3886077 A JP 3886077A JP S53123685 A JPS53123685 A JP S53123685A
Authority
JP
Japan
Prior art keywords
memory device
binary memory
information storage
igfet
composing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3886077A
Other languages
Japanese (ja)
Other versions
JPS6032981B2 (en
Inventor
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52038860A priority Critical patent/JPS6032981B2/en
Publication of JPS53123685A publication Critical patent/JPS53123685A/en
Publication of JPS6032981B2 publication Critical patent/JPS6032981B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a large-scale and highly-integrated information memory element which enables different voltage application to the capacitance electrode in reading and makes writing possible, by composing the information storage element of IGFET and information storage capacity part.
JP52038860A 1977-04-04 1977-04-04 binary storage device Expired JPS6032981B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52038860A JPS6032981B2 (en) 1977-04-04 1977-04-04 binary storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52038860A JPS6032981B2 (en) 1977-04-04 1977-04-04 binary storage device

Publications (2)

Publication Number Publication Date
JPS53123685A true JPS53123685A (en) 1978-10-28
JPS6032981B2 JPS6032981B2 (en) 1985-07-31

Family

ID=12536946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52038860A Expired JPS6032981B2 (en) 1977-04-04 1977-04-04 binary storage device

Country Status (1)

Country Link
JP (1) JPS6032981B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832296A (en) * 1981-08-20 1983-02-25 Mitsubishi Electric Corp Mos dynamic memory
JPS60211689A (en) * 1984-04-04 1985-10-24 Fujitsu Ltd Semiconductor memory device
JPS6258491A (en) * 1985-09-06 1987-03-14 Nec Corp Semiconductor memory cell
JPH02290063A (en) * 1990-03-15 1990-11-29 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH03136275A (en) * 1980-10-08 1991-06-11 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03136275A (en) * 1980-10-08 1991-06-11 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5832296A (en) * 1981-08-20 1983-02-25 Mitsubishi Electric Corp Mos dynamic memory
JPH0377595B2 (en) * 1981-08-20 1991-12-11 Mitsubishi Electric Corp
JPS60211689A (en) * 1984-04-04 1985-10-24 Fujitsu Ltd Semiconductor memory device
JPH0585990B2 (en) * 1984-04-04 1993-12-09 Fujitsu Ltd
JPS6258491A (en) * 1985-09-06 1987-03-14 Nec Corp Semiconductor memory cell
JPH02290063A (en) * 1990-03-15 1990-11-29 Semiconductor Energy Lab Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6032981B2 (en) 1985-07-31

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