JPS53135529A - C.mos static random access memory - Google Patents

C.mos static random access memory

Info

Publication number
JPS53135529A
JPS53135529A JP5153777A JP5153777A JPS53135529A JP S53135529 A JPS53135529 A JP S53135529A JP 5153777 A JP5153777 A JP 5153777A JP 5153777 A JP5153777 A JP 5153777A JP S53135529 A JPS53135529 A JP S53135529A
Authority
JP
Japan
Prior art keywords
random access
access memory
static random
mos static
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5153777A
Other languages
Japanese (ja)
Other versions
JPS5916356B2 (en
Inventor
Setsushi Kamuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP52051537A priority Critical patent/JPS5916356B2/en
Publication of JPS53135529A publication Critical patent/JPS53135529A/en
Publication of JPS5916356B2 publication Critical patent/JPS5916356B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Abstract

PURPOSE:To secure a steady holding of the data for a long period of time as well as to ensure an easy action control for the writing and reading by connecting the gate terminal to the earth or the power source via a high resistance.
JP52051537A 1977-04-30 1977-04-30 CMOS static random access memory Expired JPS5916356B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52051537A JPS5916356B2 (en) 1977-04-30 1977-04-30 CMOS static random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52051537A JPS5916356B2 (en) 1977-04-30 1977-04-30 CMOS static random access memory

Publications (2)

Publication Number Publication Date
JPS53135529A true JPS53135529A (en) 1978-11-27
JPS5916356B2 JPS5916356B2 (en) 1984-04-14

Family

ID=12889767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52051537A Expired JPS5916356B2 (en) 1977-04-30 1977-04-30 CMOS static random access memory

Country Status (1)

Country Link
JP (1) JPS5916356B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003525512A (en) * 2000-03-03 2003-08-26 モサイド・テクノロジーズ・インコーポレイテッド Improved high density memory cell
JP2013229097A (en) * 2012-04-26 2013-11-07 Gn Resound As Semiconductor memory with similar ram and rom cells
JP2018190480A (en) * 2017-05-04 2018-11-29 朝景 湯 Random access memory and associated circuit, method and system

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110631U (en) * 1984-06-22 1986-01-22 八鹿鉄工株式会社 Combine harvester straw cutter device
JPS6110632U (en) * 1984-06-22 1986-01-22 八鹿鉄工株式会社 Combine harvester straw cutter device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003525512A (en) * 2000-03-03 2003-08-26 モサイド・テクノロジーズ・インコーポレイテッド Improved high density memory cell
JP4903338B2 (en) * 2000-03-03 2012-03-28 トレイス・ステップ・ホールディングス・リミテッド・ライアビリティ・カンパニー Improved high density memory cell
JP2013229097A (en) * 2012-04-26 2013-11-07 Gn Resound As Semiconductor memory with similar ram and rom cells
JP2018190480A (en) * 2017-05-04 2018-11-29 朝景 湯 Random access memory and associated circuit, method and system

Also Published As

Publication number Publication date
JPS5916356B2 (en) 1984-04-14

Similar Documents

Publication Publication Date Title
JPS53135529A (en) C.mos static random access memory
JPS5332634A (en) Memory
JPS5427734A (en) Dynamic semiconductor memory
DE3068578D1 (en) Method of testing the operation of an internal refresh counter in a random access memory and circuit for the testing thereof
JPS5427333A (en) Memory element
JPS5364434A (en) Sense circuit of mos semiconductor memory
JPS53107240A (en) Control system of register memory
JPS53123685A (en) Binary memory device
JPS53135528A (en) C.mos static random access memory
JPS53142141A (en) Static semiconductor memory
JPS5387636A (en) Memory write unit
JPS5247334A (en) Memory control system
JPS5339024A (en) Semiconductor memory unit
JPS5366271A (en) Method of recording operation of moving body by using antivolatile random access static readdwrite memory
JPS53108358A (en) Generation system of optional wavefor
JPS53108740A (en) Memory circuit
JPS5428577A (en) Semiconductor nonvolatile memory device
JPS53117340A (en) Semiconductor memory
JPS5374846A (en) Memory control circuit
JPS52132642A (en) Reading system of charge transfer fixed memory
JPS5352325A (en) Mos random access memory
JPS52107733A (en) Memory unit
JPS537142A (en) Programmable read only memory
JPS5272546A (en) Equipment for deta deitting
JPS53114624A (en) Memory card